SQD40N04-10A

SQD40N04-10A Automotive N-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 40 0.010 0.014 42 Single D FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Package with Low Thermal Resistance 100 % Rg and UIS Tested AEC-Q101 Qualifiedd Compliant to RoHS Directive 2002/95/EC TO-252 G Drain Connected to Tab G D S Top View S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TO-252 SQD40N04-10A-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Continuous Source Current (Diode Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TC = 125 °C Conduction)a TC = 25 °C TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 40 ± 20 42 35 42 168 30 45 71 24 - 55 to + 175 mJ W °C A UNIT V THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. PCB Mountc SYMBOL RthJA RthJC LIMIT 50 2.1 UNIT °C/W 1/9 www.freescale.net.cn Free Datasheet http://www.datasheet4u.com/ SQD40N04-10A Automotive N-Channel 40 V (D-S) 175 ??C...