SUD40N02-08

SUD40N02-08 N-Channel 20 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES ID (A)a 40 40 rDS(on) (W) 0.0085 @ VGS = 4.5 V 0.014 @ VGS = 2.5 V D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested TO-252 D Drain Connected to Tab G D S G Top View Order Number: SUD40N02-08 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 20 "12 40 40 100 40 71 8.3b, c - 55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec. Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes a. Package Limited b. Surface Mounted on 1” x 1” FR4 Board c. t v 10 sec Steady State RthJA RthJC Symbol Typical 15 40 1.75 Maximum 18 50 2.1 Unit _C/W 1/5 www.freescale.net.cn Free Datasheet http://www.datasheet4u.com/ SUD40N02-08 N-Channel 20 V (D-S) 175 °C MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 125_C VD...