SUD40N04-10A

SUD40N04-10A New Product Vishay Siliconix N-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) 0.010 @ VGS = 10 V 0.014 @ VGS = 4.5 V ID (A)a 40 40 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD40N04-10A S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 40 "20 40a 40a 100 30 45 71c –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec. Junction-to-Ambientd Junction-to-Case Notes: a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. Surface mounted on 1” FR4 board. Document Number: 71420 S-03269—Rev. A, 26-Mar-01 www.vishay.com Steady State RthJA RthJC Symbol Typical 15 40 1.75 Maximum 18 50 2.1 Unit _C/W 1 Free Datasheet http://www.datasheet4u.com/ SUD40N04-10A Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 32 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 32 V, VGS = 0 V, TJ = 125_C VDS = 32 V, VG...