DTU06N03

D56/ www.daysemi.jp N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0041 at VGS = 10 V 0.0059 at VGS = 4.5 V ID (A)a, g 60g 60g Qg (Typ.) 34 nC FEATURES Halogen-free TrenchFET® Gen III Power MOSFET 100 % Rg Tested 100 % Avalanche Tested RoHS COMPLIANT APPLICATIONS D TO-252 Low-Side Switch for DC/DC Converters - Servers - POL - VRM OR-ing G G D S S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID Limit 30 ± 20 60g 60g 36b, c 29b, c 80 60g 4.9b, c 50 125 83 53 5.4b, c 3.4b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM IS IAS EAS PD A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. t ≤ 10 s Steady State Symbol RthJA RthJC Typical 18 1.0 Maximum 23 1.5 Unit °C/W 1 Free Datasheet http://www.datasheet4u.com/ D56/ www.daysemi.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Paramete...