DTU09N03

D56/ www.daysemi.jp N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0051 at VGS = 10 V 0.0063 at VGS = 4.5 V ID (A) 55d 55d Qg (Typ.) 21.7 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS D TO-252 Power Supply - Secondary Synchronous Rectification DC/DC Converter G G D S S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Single Avalanche Energy a Symbol VDS VGS TC = 25 °C TC = 70 °C ID IDM IAS L = 0.1 mH TC = 25 °C TA = 25 °C c Limit 30 ± 20 55d 55d 100 40 80 59.5 2.7 - 55 to 150 b Unit V A EAS PD TJ, Tstg mJ W °C Maximum Power Dissipationa Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) Junction-to-Case (Drain) Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited. c Symbol RthJA RthJC Limit 46 2.1 Unit °C/W 1 Free Datasheet http://www.datasheet4u.com/ D56/ www.daysemi.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State R...