DTU15N10

D56/ www.daysemi.jp N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.095 at VGS = 10 V 0.100 at VGS = 6 V ID (A) 15 15 TrenchFET® Power MOSFETS 175 °C Junction Temperature 100 % Rg Tested APPLICATIONS D Primary Side Switch TO-252 G G D S S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle  1 %) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °C TC = 25 °C TC = 125 °C Symbol VDS VGS ID IDM IS IAR EAR PD TJ, Tstg Limit 100 ± 20 15 8.7 25 15 15 11.3 62b 2.7a - 55 to 175 mJ W °C A Unit V THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case Notes: a. Surface mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. t  10 s Steady State Symbol RthJA RthJC Typical 16 45 2 Maximum 20 55 2.4 °C/W Unit 1 Free Datasheet http://www.datasheet4u.com/ D56/ www.daysemi.jp SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb VDS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 100 V, VGS = 0 V VDS = ...