DTU15P03

D561 www.daysemi.jp P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) 0.0125 at VGS = - 10 V 0.0205 at VGS = - 4.5 V ID (A)d - 14.9 - 11.6 Qg (Typ.) 29.5 nC Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS Load Switch Notebook Adaptor Switch TO-252 S G G D S D P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit - 30 ± 25 - 14.9 - 11.9 - 10.9a, b - 8.6a, b - 60 - 4.1 - 2.2a, b - 20 20 5.0 3.2 2.7a, b 1.7a, b - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d. Based on TC = 25 °C. 1 Free Datasheet http://www.datasheet4u.com/ t ≤ 10 s Steady State Symbol RthJA RthJF Typical 38 20 Maximum 46 25 Unit °C/W D561 www.daysemi.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Sour...