DTU16N25

N-Channel 250-V (D-S) 175 °C MOSFET www.din-tek.jp DTU16N25 PRODUCT SUMMARY VDS (V) 250 rDS(on) (Ω) 0.165 at VGS = 10 V ID (A) 16 FEATURES TrenchFET® Power MOSFET 175 °C Junction Temperature RoHS COMPLIANT D TO-252 G Drain Connected to Tab G D S S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)b Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °C TC = 25 °C TC = 125 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 250 ± 20 16 9.8 20 16 5 1.25 136b 3a - 55 to 175 mJ W °C A Unit V THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambienta Junction-to-Case (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 Board. b. See SOA curve for voltage derating. t ≤ 10 sec Steady State Symbol RthJA RthJC Typical 15 40 0.85 Maximum 18 50 1.1 °C/W Unit 1 Free Datasheet http://www.datasheet4u.com/ www.din-tek.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b DTU16N25 Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg c Test Conditions VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 250 V, VGS =...