DTU2N60

www.din-tek.jp DT81 Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 18 3.0 8.9 Single 600 4.4 FEATURES Halogen-free According to IEC 61249-2-21 Definition Dynamic dV/dt Rating Repetitive Avalanche Rated Surface Mount (IRFRC20, SiHFRC20) Straight Lead (IRFUC20, SiHFUC20) Available in Tape and Reel Fast Switching Ease of Paralleling Compliant to RoHS Directive 2002/95/EC D DPAK (TO-252) D D IPAK (TO-251) G G S G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID LIMIT 600 ± 20 2.0 1.3 8.0 0.33 0.020 74 2.0 4.2 42 2.5 3.0 - 55 to + 150 260d UNIT V A Pulsed Drain IDM Linear Derating Factor Linear Derating Factor (PCB Mount)e EAS Single Pulse Avalanche Energyb Repetitive Avalanche Currenta IAR Repetitive Avalanche Energya EAR Maximum Power Dissipation TC = 25 °C PD Maximum Power Dissipation (PCB Mount)e TA = 25 °C Peak Diode Recovery dV/dtc dV/dt Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 37 mH, Rg = 25 Ω, IAS = 2.0 A (see fig. 12). c. ISD ≤ 2.0 A, dI/dt ≤ 40 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted ...