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P2803NVG Dataheets PDF



Part Number P2803NVG
Manufacturers NIKO-SEM
Logo NIKO-SEM
Description N-&P-Channel MOSFET
Datasheet P2803NVG DatasheetP2803NVG Datasheet (PDF)

NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2803NVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 27.5m 34m ID 7A -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range 1 SYMBOL VDS VGS N-Channel P-Channel 30 ±20 7 6 20 2 1.3 -55 to .

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NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2803NVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 27.5m 34m ID 7A -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range 1 SYMBOL VDS VGS N-Channel P-Channel 30 ±20 7 6 20 2 1.3 -55 to 150 -30 ±20 -6 -5 -20 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RθJA TYPICAL MAXIMUM 62.5 UNITS °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA VDS = VGS, ID = 250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = 0V, VGS = ±20V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 -30 1 -1 1.5 -1.5 2.5 -2.5 ±100 ±100 nA V MIN TYP MAX UNIT Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS 1 JUL-25-2005 Free Datasheet http://www.datasheet4u.com/ NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2803NVG SOP-8 Lead-Free VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V Zero Gate Voltage Drain Current IDSS N-Ch P-Ch 1 -1 10 -10 20 -20 30 43.5 20.5 27.5 16 13 40 56 m 27.5 34 S A µA VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch VDS = -20V, VGS = 0V, TJ = 55 °C P-Ch On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V VGS = 4.5V, ID = 6A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Drain-Source Resistance1 On-State VGS = -4.5V, ID = -5A RDS(ON) VGS = 10V, ID = 7A VGS = -10V, ID = -6A Forward Transconductance1 gfs VDS = 5V, ID = 7A VDS = -5V, ID = -6A DYNAMIC Input Capacitance Ciss N-Ch N-Channel VGS = 0V, VDS = 15V, f = 1MHz P-Channel P-Ch N-Ch P-Ch 680 920 105 190 75 120 14 18.5 1.9 2.7 3.3 4.5 4.6 7.7 4 5.7 20 20 5 9.5 7 11.5 6 8.5 30 30 8 14 nS nC pF Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 2 Crss VGS = 0V, VDS = -15V, f = 1MHz N-Ch P-Ch N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, ID = 7A P-Channel VDS = 0.5V(BR)DSS, VGS = -10V, ID = -6A N-Channel VDD = 10V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch VDD = -10V N-Ch P-Ch ID ≅ -1A, VGS = -10V, RGEN = 3 ID ≅ 1A, VGS = 10V, RGEN = 3 P-Channel Qg Qgs Qgd td(on) tr td(off) Fall Time tf 2 JUL-25-2005 Free Datasheet http://www.datasheet4u.com/ NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2803NVG SOP-8 Lead-Free SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS N-Ch P-Ch N-Ch P-Ch IF = 1A, VGS = 0V IF = -1A, VGS = 0V N-Ch P-Ch 1.3 -1.3 2.6 -2.6 1 -1 V.


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