P2804BVG

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2804BVG SOP-8 Lead-Free D PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 28m ID 7.5A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation 1 Noted) SYMBOL VDS VGS LIMITS 40 ±20 7.5 6.5 20 2.5 1.3 -55 to 150 275 °C W A UNITS V V TC = 25 °C TC = 100 °C ID IDM TC = 25 °C TC = 100 °C PD Tj, Tstg TL Operating Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RθJA TYPICAL MAXIMUM 50 UNITS °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 32V, VGS = 0V VDS = 30V, VGS = 0V, TC = 125 °C VDS = 10V, VGS = 10V VGS = 4.5V, ID = 6.5A VGS = 10V, ID = 7.5A VDS = 10V, ID = 7.5A 20 30 21 19 42 28 40 1 1.5 2.5 ±250 1 10 nA µA A m S V LIMITS UNIT MIN TYP MAX 1 SEP-30-2004 Free Datasheet http://www.datasheet4u.co...