Level Enhancement. P2804BVG Datasheet

P2804BVG Enhancement. Datasheet pdf. Equivalent

Part P2804BVG
Description N-Channel Logic Level Enhancement
Feature NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2804BVG SOP-8 Lead-Free .
Manufacture NIKO-SEM
Datasheet
Download P2804BVG Datasheet

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effec P2804BVG Datasheet
P2804BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY P2804BVG Datasheet
Recommendation Recommendation Datasheet P2804BVG Datasheet




P2804BVG
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P2804BVG
SOP-8
Lead-Free
D
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 28m
ID
7.5A
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VDS
VGS
ID
IDM
PD
Tj, Tstg
TL
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1
TYPICAL
4 :GATE
5,6,7,8 :DRAIN
1,2,3 :SOURCE
Noted)
LIMITS
40
±20
7.5
6.5
20
2.5
1.3
-55 to 150
275
UNITS
V
V
A
W
°C
MAXIMUM
50
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 32V, VGS = 0V
VDS = 30V, VGS = 0V, TC = 125 °C
VDS = 10V, VGS = 10V
VGS = 4.5V, ID = 6.5A
VGS = 10V, ID = 7.5A
VDS = 10V, ID = 7.5A
LIMITS
UNIT
MIN TYP MAX
40
1 1.5 2.5
V
±250 nA
1
µA
10
20 A
30 42
m
21 28
19 S
1 SEP-30-2004
Free Datasheet http://www.datasheet4u.com/



P2804BVG
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P2804BVG
SOP-8
Lead-Free
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 10V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 7.5A
VDS = 20V,
ID 1A, VGS = 10V, RGEN = 6
790
175
65
16
2.5
2.1
2.2 4.4
7.5 15
11.8 21.3
3.7 7.4
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
Pulsed Current3
Forward Voltage1
IS
ISM
VSD IS = IS, VGS = 0V
Reverse Recovery Time
trr IF = 5 A, dlF/dt = 100A / µS
15.5
Reverse Recovery Charge
Qrr
1Pulse test : Pulse Width 300 µsec, Duty Cycle 2 .
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
7.9
1.3
2.6
1
pF
nC
nS
A
V
nS
nC
REMARK: THE PRODUCT MARKED WITH “P2804BVG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
2 SEP-30-2004
Free Datasheet http://www.datasheet4u.com/





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