P2804ND5G

NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor_Preliminary P2804ND5G TO-252-5 Lead-Free PRODUCT SUMMARY S2 G2 S1 G1 V(BR)DSS N-Channel P-Channel 40 -40 RDS(ON) 28m 55m ID 7A -5.5A G1 D1/D2 D1 G2 D2 S1 S2 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 1 1 SYMBOL VDS VGS N-Channel P-Channel 40 ±20 7 6 50 3 2.1 -55 to 150 275 -40 ±20 -5.5 -4.5 -50 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg TL W °C SYMBOL RθJC RθJA TYPICAL MAXIMUM 6 42 UNITS °C / W °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC VGS = 0V, ID = 250µA Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA VDS = VGS, ID = 250µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 40 -40 1.0 -1.0 1.5 -1.5 2.5 -2.5 ±100 ±100 V MIN TYP MAX UNIT nA 1 Apr-18-2005 Free Datasheet http://www.datasheet4u.com/ NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Tr...