RT3K11M

RT3K11M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K11M is a composite transistor built with two INK0001AX chips in SC-88 package. OUTLINE DRAWING 2.1 1.25 ① 0.65 ② ③ ⑥ ⑤ ④ 0.2 Unit：mm FEATURE ・Input impedance is high, and not necessary to consider a drive electric current. ・Vth is low, and drive by low voltage is possible. Vth=0.6～1.2V ・Low on Resistance. Ron=3.5Ω(TYP) ・High speed switching. ・Small package for easy mounting. 2.0 APPLICATION high speed switching , Analog switching 0.65 0.13 0～0.1 ⑤ Tr.1 0.9 0.65 ⑥ ④ Tr.2 TERMINAL CONNECTOR ①：SOURCE1 ②：GATE1 ③：DRAIN2 ④：SOURCE2 ⑤：GATE2 ⑥:DRAIN1 JEITA：SC-88 ① ② ③ MAXIMUM RATING (Ta=25℃) SYMBOL VDSS VGSS ID PD Tch Tstg PARAMETER RATING 50 UNIT V V mA mW ℃ ℃ 6 5 4 MARKING Drain-source voltage Gate-source voltage Drain current Total power dissipation（Ta=25℃） Channel temperature Range of Storage temperature ±8 100 150 ＋125 -55～＋125 . １ .Ｋ１ １ 2 3 ISAHAYA ELECTRONICS CORPORATION Free Datasheet http://www.datasheet4u.com/ RT3K11M Composite Transistor For high speed switching Silicon N-channel MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol V(BR)DSS IGSS IDSS Vth Parameter Test conditions Limits Min Typ Max Unit Drain-source breakdown voltage Gate-source leak current Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Static drain-source on-state resistance Input capacitance Output capacitance Switching time I D=100μA, VGS=0V V V V GS=±5V...