2SK4106 Transistor Datasheet

2SK4106 Datasheet, PDF, Equivalent


Part Number

2SK4106

Description

Field Effect Transistor

Manufacture

Toshiba

Total Page 6 Pages
Datasheet
Download 2SK4106 Datasheet


2SK4106
2SK4106
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4106
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 0.4 (typ.)
High forward transfer admittance: |Yfs| = 8.5 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
500
500
±30
12
48
45
364
12
4
150
-55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.78 °C/W
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 4.3 mH, IAR = 12 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2009-09-29
Free Datasheet http://www.datasheet4u.com/

2SK4106
2SK4106
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±25 V, VDS = 0 V
⎯ ⎯ ±10
V (BR) GSS IG = ±10 μA, VDS = 0 V
±30
IDSS
VDS = 500 V, VGS = 0 V
⎯ ⎯ 100
V (BR) DSS ID = 10 mA, VGS = 0 V
500
Vth VDS = 10 V, ID = 1 mA
2.0 4.0
RDS (ON) VGS = 10 V, ID = 6 A
0.4 0.52
Yfs
VDS = 10 V, ID = 6 A
3.5 8.5
Ciss 1500
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
15
Coss
180
tr
10 V
VGS
ID = 6 A VOUT
22
0V
ton
50 Ω
RL =
50
33 Ω
tf 36
VDD ∼− 200 V
toff Duty 1%, tw = 10 μs
170
μA
V
μA
V
V
Ω
S
pF
ns
Qg
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 12 A
Qgd
42
23 nC
19
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 12 A, VGS = 0 V
IDR = 12 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯ ⎯ 12 A
⎯ ⎯ 48 A
⎯ ⎯ −1.7 V
1200
ns
16 ⎯ μC
Marking
K4106
Part No. (or abbreviation code)
Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2 2009-09-29
Free Datasheet http://www.datasheet4u.com/


Features 2SK4106 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4106 Switching Regulator Application s Unit: mm • • • • Low drain-so urce ON resistance: RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance : |Yfs| = 8.5 S (typ.) Low leakage curr ent: IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V ( VDS = 10 V, ID = 1 mA) Absolute Maximu m Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Ra ting 500 500 ±30 12 48 45 364 12 4 150 -55 to 150 A W mJ A mJ °C °C Unit V V V Pulse (t = 1 ms) (Note 1) Drain p ower dissipation (Tc = 25°C) Single pu lse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (N ote 3) Channel temperature Storage temp erature range JEDEC JEITA TOSHIBA — SC-67 2-10R1B Weight: 1.9 g (typ.) N ote: Using continuously under heavy loads (e.g. the application of high temperature.
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