DatasheetsPDF.com

2SC2320 Data Sheet

NPN Epitaxial Planar Silicon Transistor

Download 2SC2320 Datasheet

2SC2320
2SC2320 Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications NPN Epitaxial Planar Silicon Transistor Excellent hFE Linearity Complementary to 2SA999 6.2 MAX. 5.6 MAX. Unit : mm 4.6 4.4 MAX. 1.5 1 2 3 0.45 10.5 MIN. MAXIMUM RATINGS (Ta = 25 °C) CHARACTERISTIC Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO VEBO VCEO Ic Pc Tj Tstg 50 6 50 200 300 125 -55~+125 V V V mA mW 1 : Emitter 2 : Collector 3 : Base 1.25 1 2 3 1.25 °C °C EIAJ : SC-43 JEDEC : TO-92 ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC Collector-Emitter Breakdown Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. V(BR)CEO Ic = 100μA, RBE = ∞ ICBO IEBO hFE hFE 50 0.1 0.1 90 50 0.3 200 3,5 2 800 Collector Cut-off current Emitter Cut-off current DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage VCB = 50V, IE = 0 VEB .
2SC2320

Download 2SC2320 Datasheet
2SC2320 Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications NPN Epitaxial Planar Silicon Transistor Excellent hFE Linearity Complementary to 2SA999 6.2 MAX. 5.6 MAX. Unit : mm 4.6 4.4 MAX. 1.5 1 2 3 0.45 10.5 MIN. MAXIMUM RATINGS (Ta = 25 °C) CHARACTERISTIC Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO VEBO VCEO Ic Pc Tj Tstg 50 6 50 200 300 125 -55~+125 V V V mA mW 1 : Emitter 2 : Collector 3 : Base 1.25 1 2 3 1.25 °C °C EIAJ : SC-43 JEDEC : TO-92 ELECTRICAL CHARACTERISTICS (Ta = 25 °C) CHARACTERISTIC Collector-Emitter Breakdown Voltage SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT. V(BR)CEO Ic = 100μA, RBE = ∞ ICBO IEBO hFE hFE 50 0.1 0.1 90 50 0.3 200 3,5 2 800 Collector Cut-off current Emitter Cut-off current DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage VCB = 50V, IE = 0 VEB = 6V, Ic = 0 VCE = 6V, Ic = 1mA VCE = 6V, Ic = 0,1mA V μA μA VCE(sat) Ic = 100mA, IB = 10mA V MHz pF dB Transition Frequency Collector Output Capacitance Noise Figure fT Cob NF VCE = 6V, IE = 10mA VCB = 6V, IE = 0, f = 1MHz VCE = 6V, IE = 0,3mA f = 100Hz, RG = 10kΩ Rank hFE D E F hFE Rank classification : G 90~180 150~300 250~500 400~800 MITSUBISHI ELECTRIC Free Datasheet http://www.datasheet4u.com/ 2SC2320 MITSUBISHI ELECTRIC Free Datasheet http://www.datasheet4u.com/ .


Previous 2SC2320 Next


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)