2SD655

ST 2SD655 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, D, E and F, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC ic(peak) Ptot Tj TS Value 30 15 5 700 1000 500 150 -55 to +150 Unit V V V mA mA mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 Free Datasheet http://www.datasheet4u.com/ ST 2SD655 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=1V, IC=150mA Current Gain Group D E F Collector to Base Breakdown Voltage at IC=10μA Collector to Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=20V Base Emitter Voltage at VCE=1V, IC=150mA Collector Emitter Saturation Voltage at IC=500mA, IB=50mA Gain Bandwidth Product at VCE=1V, IC=150mA fT 250 MHz VCE(sat) 0.15 0.5 V VBE 1 V ICBO 1 μA V(BR)EBO 5 V V(BR)CEO 15 V V(BR)CBO 30 V hFE hFE hFE 250 400 600 500 800 1200 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech Internat...