ST 2SD882S-Q/P/E
NPN Silicon Epitaxial Planar Transistor for the output stage of 0.75W audio, voltage regulator, and rel...
ST 2SD882S-Q/P/E
NPN Silicon Epitaxial Planar
Transistor for the output stage of 0.75W audio, voltage
regulator, and relay driver. The
transistor is subdivided into three groups Q, P and E, according to its DC current gain. On special request, these
transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25OC) Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC Ptot Tj TS Value 40 30 5 3 750 150 -55 to +150 Unit V V V A mW
O O
C C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/11/2003
Free Datasheet http://www.datasheet4u.com
ST 2SD882S-Q/P/E
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=2V, IC=1A Q P E at VCE=2V, IC=20mA Collector Cutoff Current at VCB=30V Emitter Cutoff Current at VEB=3V Collector to Base Breakdown Voltage at IC=100μA Collector to Emitter Breakdown Voltage at IC=1mA Emitter to Base Breakdown Voltage at IE=10μA Collector to Emitter Saturation Voltage at IC=2A,IB=200mA Base to Emitter Saturation Voltage at IC=2A,IB=200mA Transition Frequency at VCE=5V, IC=0.1A,f=100MHz Collector Output Capacitance at VCB=10V,f=1MHz Cob 45 pF fT 90 MHz VBE(sat) 2 V VCE(sat) 0.5 V V(BR)EBO 5 V V(BR)CEO) 30 V V(BR)CBO 40 V IEBO 1 uA...
