TSF20H100C

TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ITO-220AB MECHANICAL DATA Case : ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal：Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity : As marked Mounting torque : 5 in-lbs. max. Weight：1.7 gram (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current per device per diode SYMBOL TSF20H100C TSF20H120C TSF20H150C VRRM IF(AV) IFSM dV/dt VAC VBR Typ. IF = 5A Instantaneous forward voltage per diode ( Note1 ) IF = 10A IF = 5A IF = 10A Instantaneous reverse current per diode at rated reverse voltage Typical thermal resistance per diode Operating junction temperature range Storage temperature range Note 1: Pulse Test with Pulse Width=300us, 1% Duty Cycle TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C VF VF IR RθjC TJ TSTG 0.64 0.74 0.55 0.63 1.5 2.5 100 Max. 0.81 0.70 200 10 Typ. 0.68 0.78 0.56 0.63 5 4.9 - 55 to + 150 - 55 to + 150 100 120 20 10 110 10000 1500 120 Max 0.87 0...