SSF7509

SSF7509 Main Product Characteristics: VDSS RDS(on) ID 75V 6.5mohm(typ.) 80A TO220 Marking and pin Assignment Schematic diagram Features and Benefits:      Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute max Rating: Symbol ID @ TC = 25° C ID @ TC = 100° C IDM PD @TC = 25° C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3mH Avalanche Current @ L=0.3mH Operating Junction and Storage Temperature Range Max. 80 70 320 200 2.0 75 ± 20 375 50 -55 to + 175 W W/° C V V mJ A ° C A Units ©Silikron Semiconductor CO.,LTD. 2012.04.09 www.silikron.com Version : 3.5 page 1 of 8 Free Datasheet http://www.datasheet4u.com/ SSF7509 Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ T...