XP151A12A2MR-G

XP151A12A2MR-G Power MOSFET ETR1118_003 ■GENERAL DESCRIPTION The XP151A12A2MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems ■FEATURES Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V : Rds(on) = 0.16Ω@ Vgs = 2.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 2.5V N-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free ■PIN CONFIGURATION/ MARKING ■PRODUCT NAMES 11 2 x G：Gate S：Source D：Drain PRODUCTS PACKAGE ORDER UNIT XP151A12A2MR SOT-23 3,000/Reel XP151A12A2MR-G(*) SOT-23 3,000/Reel (*) The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant. * x represents production lot number. ■EQUIVALENT CIRCUIT ■ABSOLUTE MAXIMUM RATINGS Ta = 25℃ PARAMETER SYMBOL RATINGS UNITS Drain - Source Voltage Vdss 20 V Gate - Source Voltage Vgss ±12 V Drain Current (DC) Id 1 A Drain Current (Pulse) Idp 4 A Reverse Drain Current Idr 1 A Channel Power Dissipation * Pd 0.5 W Channel Temperature Tch 150 ℃ Storage Temperature Tstg -55~150 ℃ ...