SEMICONDUCTOR
TECHNICAL DATA
General Description
It s mainly suitable for low viltage applications such as automotive, D...
SEMICONDUCTOR
TECHNICAL DATA
General Description
It s mainly suitable for low viltage applications such as automotive, DC/DC converters and a load switch in battery powered applications
E A
KMB050N60PA
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
O C F G B Q
DIM MILLIMETERS _ 0.2 9.9 + A B C D E
FEATURES
VDSS= 60V, ID= 50A Drain-Source ON Resistance : RDS(ON)=18m (Max.) @VGS = 10V
D I K M L
P
F G H
J H
I J K L M N O
15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 +
MOSFET MAXIMUM RATING (Ta=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current Pulsed (Note 1) Drain-Source Diode Forward Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range Note1) Pulse Test : Pulse width IDP IS
Unless otherwise noted)
RATING 60 25 50 200 50 120 -55 175 -55 175 1% UNIT V V A A A W
1
N
N
SYMBOL VDSS VGSS I D*
2
3
1. GATE 2. DRAIN 3. SOURCE
P Q
TO-220AB
PD* 25 Tj Tstg 10 S Duty cycle
Thermal Characteristics
CHARACTERISTIC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case SYMBOL RthJA RthJC RATING 62.5 1.24 UNIT /W /W
Equivalent Circuit
D
G
S
2007. 8. 9
Revision No : 1
1/6
Free Datasheet http://www.datasheet4u.com/
KMB050N60PA
MOSFET Electrical Characteristics (Ta=25
CHARACTERISTIC
Unless otherwise noted)
SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakd...
