050N60PA Datasheet PDF Download, KEC





050N60PA Datasheet PDF File Download

Part Number 050N60PA
Description KMB050N60PA
Manufacture KEC
Total Page 6 Pages
PDF Download Download 050N60PA Datasheet PDF

Features: SEMICONDUCTOR TECHNICAL DATA General Des cription It s mainly suitable for low v iltage applications such as automotive, DC/DC converters and a load switch in battery powered applications E A KMB05 0N60PA N CHANNEL MOS FIELD EFFECT TRANS ISTOR O C F G B Q DIM MILLIMETERS _ 0. 2 9.9 + A B C D E FEATURES VDSS= 60V, ID= 50A Drain-Source ON Resistance : RD S(ON)=18m (Max.) @VGS = 10V D I K M L P F G H J H I J K L M N O 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 + MOSFET MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Ga te-Source Voltage DC Drain Current Puls ed (Note 1) Drain-Source Diode Forward Current Drain Power Dissipation Maximum Junction Temperature Storage Temperatu re Range Note1) Pulse Test : Pulse widt h IDP IS Unless otherwise noted) RATIN G 60 25 50 200 50 120 -55 175 -55 175 1 % UNIT V V A A A W 1 N N SYMBOL VDSS VGSS I D* 2 3 1. GAT.

Keywords: 050N60PA, datasheet, pdf, KEC, KMB050N60PA, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute, Equivalent

SEMICONDUCTOR
TECHNICAL DATA
General Description
It s mainly suitable for low viltage applications such as automotive,
DC/DC converters and a load switch in battery powered applications
FEATURES
VDSS= 60V, ID= 50A
Drain-Source ON Resistance :
RDS(ON)=18m (Max.) @VGS = 10V
MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC
Pulsed (Note 1)
Drain-Source Diode Forward Current
Drain Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
VDSS
VGSS
ID*
IDP
IS
PD* 25
Tj
Tstg
60
25
50
200
50
120
-55 175
-55 175
V
V
A
A
A
W
Note1) Pulse Test : Pulse width 10 S Duty cycle 1%
Thermal Characteristics
CHARACTERISTIC
SYMBOL
RATING
UNIT
Thermal Resistance, Junction-to-Ambient RthJA 62.5 /W
Thermal Resistance, Junction-to-Case
RthJC
1.24
/W
Equivalent Circuit
D
KMB050N60PA
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 9.9 +_ 0.2
B 15.95 MAX
C 1.3+0.1/-0.05
D 0.8 +_ 0.1
E 3.6 +_ 0.2
F 2.8 +_ 0.1
G 3.7
H 0.5+0.1/-0.05
I 1.5
J 13.08 +_ 0.3
K 1.46
L 1.4 +_ 0.1
M 1.27 +_ 0.1
N 2.54 +_ 0.2
O 4.5 +_ 0.2
P 2.4 +_ 0.2
Q 9.2 +_ 0.2
TO-220AB
G
S
2007. 8. 9
Revision No : 1
1/6
Free Datasheet http://www.datasheet4u.com/

                 






Index : 0  1  2  3   4  5  6  7   8  9  A  B   C  D  E  F   G  H  I  J   K  L  M  N   O  P  Q  R   S  T  U  V   W  X  Y  Z
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)