ST 2SA1268
PNP Silicon Epitaxial Planar Transistor For high voltage applications. The transistor is subdivided into two ...
ST 2SA1268
PNP Silicon Epitaxial Planar
Transistor For high voltage applications. The
transistor is subdivided into two groups, G and L according to its DC current gain. On special request, these
transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (T
a
= 25? ) Symbol Value 120 120 5 100 100 300 125 -55 to +125 Unit V V V mA mA mW
O O
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range
-VCBO -VCEO -VEBO -IC IE Ptot Tj TS
C C
G S P FORM A IS AVAILABLE
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Free Datasheet http://www.datasheet4u.com/
ST 2SA1268
Characteristics at Tamb=25 OC Symbol DC Current Gain at -VCE=6V, -IC=2mA Current Gain Group G L Collector Emitter Breakdown Voltage at -IC=1mA Gain Bandwidth Product at -VCE=6V, -IC=1mA Noise Figure at -VCE=6V, -IC=0.1mA, RG=10kΩ, f=10Hz Output Capacitance at -VCB=10V, f=1MHz Base Emitter Voltage at -VCE=6V,-IC=2mA Collector Cutoff Current at -VCB=120V Emitter Cutoff Current at -VEB=5V Collector Saturation Voltage at -IC=10mA, -IB=1mA -VCE(sat) 0.3 V -IEBO 0.1 µA -ICBO 0.1 µA -VBE 0.65 V COB 4 pF NF 6 dB fT 100 MHz -V(BR)CEO 120 V hFE hFE 200 350 400 700 Min. Typ. Max. Unit
G S P FORM A IS AVAILABLE
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Semtech International Holdings Li...
