C5337

DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SC5337 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to UHF band, which is suitable for the CATV, tele-communication, and such. FEATURES PACKAGE DIMENSIONS (in millimeters) 4.5±0.1 1.6±0.2 1.5±0.1 Low distortion IM2 = 59 dB TYP. @VCE = 10 V, IC = 50 mA IM3 = 82 dB TYP. @VCE = 10 V, IC = 50 mA Low noise NF = 1.5 dB TYP. @VCE = 10 V, IC = 10 mA, f = 1 GHz C E B E 3.95±0.25 2.45±0.1 New power mini-mold package version of a 4-pin type gain-improved on the 2SC3356 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Note1 0.8MIN. Rating 30 15 3.0 250 2.0 150 –65 to +150 Unit V V V mA W °C °C 0.42 ±0.06 1.5 3.0 0.46 ±0.06 0.42 ±0.06 0.25±0.02 PIN CONNECTIONS E: Emitter C: Collector B: Base Note 1. 0.7 mm × 16 cm double sided ceramic substrate (Copper plaiting) 2 Document No. P10939EJ1V0DS00 (1st edition) Date Published April 1996 P Printed in Japan © 1996 Free Datasheet http://www.datasheet4u.com/ 2SC5337 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Insertion Power Gain Noise Figure 1 Noise Figure ...