2SD768(K)
Silicon NPN Epitaxial
Application
Medium speed and power switching complementary pair with 2SB727(K)
Outline...
2SD768(K)
Silicon
NPN Epitaxial
Application
Medium speed and power switching complementary pair with 2SB727(K)
Outline
TO-220AB
2
1 1. Base 2. Collector (Flange) 3. Emitter
1
2 3
3 kΩ (Typ)
200 Ω (Typ) 3
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg
1
Ratings 120 120 7 6 10 40 150 –55 to +150
Unit V V V A A W °C °C
Free Datasheet http://www.datasheet4u.com/
2SD768(K)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 120 7 — — 1000 — — — — — — Typ — — — — — — — — — 1.0 3.0 Max — — 100 10 20000 1.5 3 2 3.5 — — V V V V µs µs Unit V V µA µA Test conditions I C = 25 mA, RBE = ∞ I E = 50 mA, IC = 0 VCB = 120 V, IE = 0 VCE = 100 V, RBE=∞ VCE = 3 V, IC = 3 A*1 I C = 3 A, IB = 6 mA*1 I C = 6A, IB = 60 mA*1 I C = 3 A, IB = 6 mA*1 I C = 6 A, IB = 60 mA*1 I C = 3 A, IB1 = –IB2 = 6 mA I C = 3 A, IB1 = –IB2 = 6 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test. hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 t on t off
Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) 3...
