2SC5720
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5720
MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH ...
2SC5720
TOSHIBA
Transistor Silicon
NPN Epitaxial Planar Type
2SC5720
MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS
· Low Saturation Voltage: VCE (sat) (1) = 0.25 V (max) (IC = 3 A/IB = 60 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector power dissipation Junction temperature Storage temperature range DC Pulsed Symbol VCBO VCEO VEBO IC ICP PC (Note1) Tj Tstg Rating 15 10 7 5 9 550 150 -55 to 150 Unit V V V A mW °C °C
JEDEC JEITA TOSHIBA
― ― 2-4E1A
Note1: When a device is mounted on a glass epoxy board (35 mm ´ 30 mm ´ 1mm)
Electrical Characteristics (Ta = 25°C)
Characteristic Collector cut-off current Emitter cut-off current Collector-Emitter breakdown voltage Symbol ICBO IEBO V(BR)CEO Test Condition VCB = 15 V, IE = 0 VEB = 5 V, IC = 0 IC = 1 mA, IB = 0
Weight: 0.13 g (typ.)
Min ¾ ¾ 10 700 450 240 ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ ¾ ¾ 30 Max 0.1 0.1 ¾ 2000 ¾ ¾ 0.25 ¾ V pF Unit mA mA V
hFE(1) (Note2) VCE = 1.5 V, IC = 0.5 A DC current gain hFE(2) (Note2) VCE = 1.5 V, IC = 2 A hFE(3) (Note2) VCE = 1.5 V, IC = 5 A Collector-Emitter saturation voltage Collector output capacitance VCE (sat) (Note2) Cob IC = 3 A, IB = 60 mA VCB = 10 V, IE = 0, f = 1 MHz
Note2: Pulse test
1
2001-10-03
Free Datasheet http://www.datasheet4u.com/
2SC5720
IC – VCE
5 60 30 20 10 8 3 6 4 2 2 1 1 Common-Emitter 1 Common-Emitter IC/IB = 50 Ta = 25°C
VCE (sat) – IC
4
Collector-Emitter sa...