IXTT16N10D2

Advance Technical Information Depletion Mode MOSFET IXTH16N10D2 IXTT16N10D2 VDSX ID(on) RDS(on) = > ≤ 100V 16A 64mΩ N-Channel TO-247 (IXTH) Symbol VDSX VDGX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Maximum Ratings 100 100 ±20 ±30 695 - 55 ... +150 150 - 55 ... +150 V V V V W °C °C °C °C °C Nm/lb.in. g g G D S D (Tab) TO-268 (IXTT) G S D (Tab) 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-247 TO-268 300 260 1.13 / 10 6 4 G = Gate S = Source D = Drain Tab = Drain Features Normally ON Mode International Standard Packages Molding Epoxies Meet UL 94 V-0 Flammability Classification Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSX VGS(off) IGSX IDSX(off) RDS(on) ID(on) VGS = - 5V, ID = 250μA VDS = 25V, ID = 1mA VGS = ±20V, VDS = 0V VDS = VDSX, VGS= - 5V VGS = 0V, ID = 8A, Note 1 VGS = 0V, VDS = 25V, Note 1 16 TJ = 125°C Characteristic Values Min. Typ. Max. 100 - 2.0 - 4.0 V V Advantages Easy to Mount Space Savings High Power Density Applications Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads ±100 nA 5 μA 75 μA 64 mΩ A © 2010 IXYS CORPORATION, All Rights Reserved DS100258(4/10) Free Datasheet http://www.datasheet4u.com/ IXTH16N10D2 IXTT16N10D2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Ciss Coss Crss td...