Advance Technical Information
Depletion Mode MOSFET
IXTH16N10D2 IXTT16N10D2
VDSX ID(on)
RDS(on)
= > ≤
100V 16A 64mΩ...
Advance Technical Information
Depletion Mode MOSFET
IXTH16N10D2 IXTT16N10D2
VDSX ID(on)
RDS(on)
= > ≤
100V 16A 64mΩ
N-Channel
TO-247 (IXTH)
Symbol VDSX VDGX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C
Maximum Ratings 100 100 ±20 ±30 695 - 55 ... +150 150 - 55 ... +150 V V V V W °C °C °C °C °C Nm/lb.in. g g
G
D
S
D (Tab)
TO-268 (IXTT) G S
D (Tab)
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-247 TO-268
300 260 1.13 / 10 6 4
G = Gate S = Source
D = Drain Tab = Drain
Features Normally ON Mode International Standard Packages Molding Epoxies Meet UL 94 V-0 Flammability Classification Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSX VGS(off) IGSX IDSX(off) RDS(on) ID(on) VGS = - 5V, ID = 250μA VDS = 25V, ID = 1mA VGS = ±20V, VDS = 0V VDS = VDSX, VGS= - 5V VGS = 0V, ID = 8A, Note 1 VGS = 0V, VDS = 25V, Note 1 16 TJ = 125°C Characteristic Values Min. Typ. Max. 100 - 2.0 - 4.0 V V Advantages Easy to Mount Space Savings High Power Density Applications Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current
Regulators Active Loads
±100 nA 5 μA 75 μA 64 mΩ A
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DS100258(4/10)
Free Datasheet http://www.datasheet4u.com/
IXTH16N10D2 IXTT16N10D2
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Ciss Coss Crss td...