K3530-01MR

2SK3530-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg VISO Ratings 800 800 ±7 ±28 ±30 7 235.3 40 5 2.16 70 +150 -55 to +150 2 Unit V V A A V A mJ kV/µs kV/µs W °C °C kVrms Equivalent circuit schematic Drain(D) Gate(G) Source(S) *6 < *1 L=8.8mH, Vcc=80V, Tch=25°C See to Avalanche Energy Graph *2 Tch = 150°C *3 IF< 800V *5 V GS =-30V *6 t=60sec, f=60Hz = BVDSS, Tch < = 150°C *4 VDS< = -ID, -di/dt=50A/µs, Vcc < = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total ...