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Power Amplifier. A614 Datasheet

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Power Amplifier. A614 Datasheet






A614 Amplifier. Datasheet pdf. Equivalent




A614 Amplifier. Datasheet pdf. Equivalent





Part

A614

Description

Low Frequency Power Amplifier



Feature


·ç¹âÐÀ¼¼Êõ×ÊÁÏ ■■APPLI CATION:Low Frequency Power Amplifier. A614 —PNP silicon — Power Regula tor ■■MAXIMUM RATINGS(Ta=25℃ ) PARAMETER Collector-base voltage Co llector-emitter voltage Emitter-base vo ltage Collector current Collector Power Dissipation Junction Temperature Stora ge Temperature Range SYMBOL RATING UNIT VCBO VCEO VEBO IC PC TJ Tstg -80 -55 -5 -3.0 25 150.
Manufacture

FGX

Datasheet
Download A614 Datasheet


FGX A614

A614; V V V A W ℃ 1 TO-220 2.Collector 3.Emitter 1.Base ﹣55~150℃ ■■ ELECTRICAL CHARACTERISTICS PARAMETER D C Current Gain Collector Cut-off Curren t Emitter Cut-off Current Collector-Bas e Breakdown Voltage Collector-Emitter B reakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation V oltage SYMBOL hFE (Ta=25℃) TYP. MAX. UNIT TEST CONDITION VCE= -5V,.


FGX A614

Ic= -0.5A MIN. 40 240 -50 -10 µA µA V V V -0.15 -0.5 V ICBO IEBO BVCBO BV CEO BVEBO VCE(sat) -80 -55 -5 VCB= -50 V,IE=0 VEB= -3V,Ic=0 Ic= -0.5mA,I E=0 Ic= -10mA,IB=0 IE= -0.5mA,Ic=0 Ic= -1A,IB= -0.1A ■■hFE Classifi cation And Marking Classification hFE R 40~80 O 70~140 Y 120~240 Free Dat asheet http://www.datasheet4u.com/ .


FGX A614

.

Part

A614

Description

Low Frequency Power Amplifier



Feature


·ç¹âÐÀ¼¼Êõ×ÊÁÏ ■■APPLI CATION:Low Frequency Power Amplifier. A614 —PNP silicon — Power Regula tor ■■MAXIMUM RATINGS(Ta=25℃ ) PARAMETER Collector-base voltage Co llector-emitter voltage Emitter-base vo ltage Collector current Collector Power Dissipation Junction Temperature Stora ge Temperature Range SYMBOL RATING UNIT VCBO VCEO VEBO IC PC TJ Tstg -80 -55 -5 -3.0 25 150.
Manufacture

FGX

Datasheet
Download A614 Datasheet




 A614
■■APPLICATION:Low Frequency Power Amplifier.
Power Regulator
■■MAXIMUM RATINGSTa25℃)
PARAMETER
SYMBOL RATING UNIT
Collector-base voltage
VCBO
-80 V
Collector-emitter voltage
VCEO
-55 V
Emitter-base voltage
VEBO -5 V
Collector current
IC -3.0 A
Collector Power Dissipation
PC 25 W
Junction Temperature
TJ 150
Storage Temperature Range
Tstg 55~150
A614
—PNP silicon —
1 TO-220
1.Base 2.Collector 3.Emitter
■■ ELECTRICAL CHARACTERISTICS Ta=25℃)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION
DC Current Gain
hFE 40
240
VCE= -5VIc= -0.5A
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
Collector-Base Breakdown Voltage BVCBO
Collector-Emitter Breakdown Voltage BVCEO
Emitter-Base Breakdown Voltage
BVEBO
Collector-Emitter Saturation Voltage VCE(sat)
-80
-55
-5
-50 µA VCB= -50VIE=0
-10 µA VEB= -3VIc=0
V Ic= -0.5mAIE=0
V Ic= -10mAIB=0
V
-0.15 -0.5 V
IE= -0.5mAIc=0
Ic= -1AIB= -0.1A
■■hFE Classification And Marking
Classification
hFE
R
40~80
O
70~140
Y
120~240
Free Datasheet http://www.datasheet4u.com/














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