RB751SM-40

Data Sheet Schottky Barrier Diode RB751SM-40 lApplications High speed switching lDimensions (Unit : mm) 0.8±0.05 0.12±0.05 lLand size figure (Unit : mm) 0.8 1.2±0.05 1.6±0.1 lFeatures 1)Ultra small mold type. (EMD2) 2)High reliability 0.6 EMD2 lConstruction Silicon epitaxial 0.3±0.05 0.6±0.1 lStructure ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) lTaping specifications (Unit : mm) lAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg Limits 40 30 30 200 150 -40 to +150 Unit V V mA mA °C °C lElectrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current Capacitance between terminals IR Ct Min. - Typ. 2 Max. 0.37 0.5 - Unit V μA pF IF=1mA Conditions VR=30V VR=1V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A Free Datasheet http://www.datasheet4u.com/ 1.7 RB751SM-40 　 Data Sheet 100 Ta=125℃ FORWARD CURRENT:IF(mA) 1000 REVERSE CURRENT:IR(uA) 100 10 1 0.1 0.01 Ta=125℃ Ta=75℃ Ta=25℃ 10 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 10 Ta=75℃ 1 Ta=-25℃ 0.1 Ta=25℃ 1 Ta=-25℃ 0.01 0.001 0 100 200 300 400 500 600 700 800 900 1000 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 0 10 20 0.1 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHAR...