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NPN Transistor. 2SC6072 Datasheet

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NPN Transistor. 2SC6072 Datasheet






2SC6072 Transistor. Datasheet pdf. Equivalent




2SC6072 Transistor. Datasheet pdf. Equivalent





Part

2SC6072

Description

Multi-chip Device Silicon NPN Transistor



Feature


2SC6072 TOSHIBA Multi-chip Device Silico n NPN Epitaxial Transistor Type 2SC607 2 Power Amplifier Applications Driver S tage Amplifier Applications Unit: mm High transition frequency: fT = 200 M Hz (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emit ter-base voltage Collector current Base current Collector po.
Manufacture

Toshiba

Datasheet
Download 2SC6072 Datasheet


Toshiba 2SC6072

2SC6072; wer dissipation Junction temperature Sto rage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 180 180 5 2.0 1.0 2.0 20 1 50 − 55~150 Unit V V V A A W W °C ° C 1: BASE 2: COLLECTOR 3: EMITTER JEDE C JEITA TOSHIBA Weight: 1.7 g (typ.) SC-67 2-10U1A Note1: Using continuo usly under heavy loads (e.g. the applic ation of high temperature/.


Toshiba 2SC6072

current/voltage and the significant chan ge in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating co nditions (i.e. operating temperature/cu rrent/voltage, etc.) are within the abs olute maximum ratings. Please design th e appropriate reliability upon reviewin g the Toshiba Semiconductor Reliability Handbook (“Handli.


Toshiba 2SC6072

ng Precautions”/“Derating Concept an d Methods”) and individual reliabilit y data (i.e. reliability test report an d estimated failure rate, etc). Electr ical Characteristics (Ta = 25°C) Chara cteristic Collector cut-off current Emi tter cut-off current Collector-emitter breakdown voltage DC current gain Colle ctor-emitter saturation voltage Base-em itter voltage Transition .

Part

2SC6072

Description

Multi-chip Device Silicon NPN Transistor



Feature


2SC6072 TOSHIBA Multi-chip Device Silico n NPN Epitaxial Transistor Type 2SC607 2 Power Amplifier Applications Driver S tage Amplifier Applications Unit: mm High transition frequency: fT = 200 M Hz (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emit ter-base voltage Collector current Base current Collector po.
Manufacture

Toshiba

Datasheet
Download 2SC6072 Datasheet




 2SC6072
TOSHIBA Multi-chip Device Silicon NPN Epitaxial Transistor Type
2SC6072
Power Amplifier Applications
Driver Stage Amplifier Applications
2SC6072
Unit: mm
High transition frequency: fT = 200 MHz (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Ta = 25°C
Collector power dissipation
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
180
180
5
2.0
1.0
2.0
20
150
55~150
V
V
V
A
A
W
W
°C
°C
1: BASE
2: COLLECTOR
3: EMITTER
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1A
Weight: 1.7 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Conditions
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE
fT
Cob
VCB = 180 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 0.1 A
VCE = 5 V, IC = 1 A
IC = 1 A, IB = 0.1 A
VCE = 5 V, IC = 1 A
VCE = 5 V, IC = 0.3 A
VCB = 10 V, IE = 0, f = 1MHz
Min Typ. Max Unit
⎯ ⎯ 5.0 μA
⎯ ⎯ 5.0 μA
180
V
100 320
50 ⎯ ⎯
⎯ ⎯ 1.0 V
⎯ ⎯ 1.5 V
200 MHz
16 pF
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2009-12-21
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 2SC6072
Marking
2SC6072
C6072
Part No. (or abbreviation code)
Lot No.
Note2
Note2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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2009-12-21
Free Datasheet http://www.datasheet4u.com/




 2SC6072
2.0
100
300
1.6
IC – VCE
50
30
1.2 10
5
0.8
3
0.4
Common emitter Tc=25
Single non-repetitive pulse
IB = 1 mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
2SC6072
IC – VBE
2.0
Common emitter VCE = 5 V
Single non-repetitive pulse
1.5
1.0
Tc = 100
25
0.5
25
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
1000
100
hFE – IC
Tc = 100°C
25°C
25°C
10
Common emitter VCE = 5 V
Single non-repetitive pulse
1
0.0001
0.001
0.01
0.1
1
Collector current IC (A)
10
VCE (sat) – IC
1
Common emitter β=10
Single non-repetitive pulse
0.1
0.01
Tc = 100°C
25°C
25°C
0.001
0.001
0.01 0.1
1
Collector current IC (A)
10
VBE (sat) – IC
10 Common emitter β=10
Single non-repetitive pulse
1 Tc= −25°C
25°C
100°C
0.1
0.01
0.001
0.01 0.1
1
Collector current IC (A)
10
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Free Datasheet http://www.datasheet4u.com/






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