DatasheetsPDF.com

2SC3973. C3973 Datasheet

DatasheetsPDF.com

2SC3973. C3973 Datasheet







C3973 2SC3973. Datasheet pdf. Equivalent




C3973 2SC3973. Datasheet pdf. Equivalent





Part

C3973

Description

2SC3973

Manufacture

Panasonic Semiconductor

Datasheet
Download C3973 Datasheet


Panasonic Semiconductor C3973

C3973; Power Transistors 2SC3973, 2SC3973A Sil icon NPN triple diffusion planar type F or high breakdown voltage high-speed sw itching 0.7±0.1 Unit: mm 10.0±0.2 5. 5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.4 ±0.1 1.3±0.2 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 4.2±0.2 s Features q q q q q High-speed switchi ng High collector to base voltage VCBO Wide area of safe operation (ASO).


Panasonic Semiconductor C3973

Satisfactory linearity of foward curren t transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 800 900 800 900 500 8 15 7 4 45 2 150 –55 to +150 Unit V 16.7±0.3 14.0±0.5 P arameter Collector to base voltage Coll ector to 2SC3973 2SC3973A 2SC3973 Symb ol VCBO VCES VCEO VEBO ICP IC IB emitt er voltage 2SC3973A Col.


Panasonic Semiconductor C3973

lector to emitter voltage Emitter to bas e voltage Peak collector current Collec tor current Base current Collector powe r TC=25°C dissipation Ta=25°C Junctio n temperature Storage temperature V V V A A A W ˚C ˚C Solder Dip s Absolu te Maximum Ratings 4.0 7.5±0.2 1:Ba se 2:Collector 3:Emitter TO–220 Full Pack Package(a) PC Tj Tstg s Electric al Characteristics Parame.



Part

C3973

Description

2SC3973

Manufacture

Panasonic Semiconductor

Datasheet
Download C3973 Datasheet




 C3973
Power Transistors
2SC3973, 2SC3973A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SC3973
base voltage 2SC3973A
VCBO
800
900
Collector to 2SC3973
emitter voltage 2SC3973A
VCES
800
900
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCEO
VEBO
ICP
IC
IB
PC
500
8
15
7
4
45
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SC3973
current
2SC3973A
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 800V, IE = 0
VCB = 900V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 4A
IC = 4A, IB = 0.8A
IC = 4A, IB = 0.8A
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 4A, IB1 = 0.8A, IB2 = –1.6A,
VCC = 200V
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
100
µA
100
100 µA
500 V
15
8
1.0 V
1.5 V
20 MHz
1.0 µs
3.0 µs
0.3 µs
1
Free Datasheet http://www.datasheet4u.com/





 C3973
Power Transistors
60
50
(1)
40
30
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
20
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=5
30
10
3
1 TC=–25˚C
25˚C
0.3
100˚C
0.1
0.1
0.3 1 3 10 30
Collector current IC (A)
100
1000
300
100
Cob — VCB
IE=0
f=1MHz
TC=25˚C
30
10
3
1
13
10 30 100
Collector to base voltage VCB (V)
IC — VCE
12
TC=25˚C
10
8
IB=1200mA
1000mA
6 800mA
600mA
400mA
4 300mA
200mA
2 100mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SC3973, 2SC3973A
VCE(sat) — IC
100
IC/IB=5
30
10
3
1
TC=100˚C
0.3
25˚C
0.1
–25˚C
0.03
0.01
0.1
0.3 1 3 10 30
Collector current IC (A)
100
1000
300
100
hFE — IC
VCE=5V
30
10
TC=–25˚C
25˚C
3 100˚C
1
0.1 0.3 1 3 10 30 100
Collector current IC (A)
1000
300
100
fT — IC
VCE=10V
f=1MHz
TC=25˚C
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=5
(2IB1=–IB2)
10 VCC=200V
TC=25˚C
3
tstg
1
0.3 ton
tf
0.1
0.03
0.01
0
1234567
Collector current IC (A)
8
Area of safe operation (ASO)
100
30
ICP
Non repetitive pulse
TC=25˚C
10 IC
t=0.5ms
3
10ms
1 DC
1ms
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2
Free Datasheet http://www.datasheet4u.com/





 C3973
Power Transistors
2SC3973, 2SC3973A
Area of safe operation, reverse bias ASO
8
7 IC
6
Lcoil=30µH
IC/IB=5
(IB1=–IB2)
TC100˚C
5
4
3
2
1
0
0 100 200 300 400 500 600 700 800
Collector to emitter voltage VCE (V)
Reverse bias ASO measuring circuit
T.U.T
IB1
IC
Vin –IB2
tW
L coil
VCC
Vclamp
10000
1000
Rth(t) — t
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.2A (2W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
100
(1)
10 (2)
1
0.1
10–4
10–3
10–2
10–1
1
10
Time t (s)
102 103
104
3
Free Datasheet http://www.datasheet4u.com/



Recommended third-party C3973 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)