| Feature |
NTD60N02R Power MOSFET
Features
62 A, 24 V, N−Channel, DPAK
• • • • • •
Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters Pb−Free Packages are Available
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V(BR)DSS 24 V
RDS(on) TYP 8.4 mW @ 10 V
ID MAX 62 A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Cu. |
