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2SK3498. K3498 Datasheet

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2SK3498. K3498 Datasheet






K3498 2SK3498. Datasheet pdf. Equivalent




K3498 2SK3498. Datasheet pdf. Equivalent





Part

K3498

Description

2SK3498



Feature


2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2 SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • • • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) High forward tran sfer admittance: Yfs = 0.6 S (typ .) Low leakage current: IDSS = 100 µA (max) (VDS = 400 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID.
Manufacture

Toshiba Semiconductor

Datasheet
Download K3498 Datasheet


Toshiba Semiconductor K3498

K3498; = 1 mA) Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Drain-source vo ltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage Drain current Dra in power dissipation Single pulse avala nche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Ch annel temperature Storage temperature r ange DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR.


Toshiba Semiconductor K3498

Tch Tstg Rating 400 400 ±30 1 3 20 113 1 2 150 −55 to150 Unit V V V A W mJ A mJ °C °C Pulse (Note 1) JEDEC JEI TA TOSHIBA ― SC-64 2-7B1B Weight: 0 .36 g (typ.) Thermal Characteristics C haracteristics Thermal resistance, chan nel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a ) Max 6.25 125 Unit °C/W °C/W Note 1 : Please use devices on con.


Toshiba Semiconductor K3498

dition that the channel temperature is b elow 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 183 mH, RG = 25 , IAR = 1 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an elec trostatic sensitive device. Please hand le with caution. JEDEC JEITA TOSHIBA ― 2-7J1B Weight: 0.36 g (typ.) 1 2002-02-27 Free Datasheet.

Part

K3498

Description

2SK3498



Feature


2SK3498 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2 SK3498 DC-DC Converter, Relay Drive and Motor Drive Applications • • • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) High forward tran sfer admittance: Yfs = 0.6 S (typ .) Low leakage current: IDSS = 100 µA (max) (VDS = 400 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID.
Manufacture

Toshiba Semiconductor

Datasheet
Download K3498 Datasheet




 K3498
2SK3498
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3498
DC-DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 4.0 (typ.)
High forward transfer admittance: Yfs= 0.6 S (typ.)
Low leakage current: IDSS = 100 µA (max) (VDS = 400 V)
Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Tc = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
400
400
±30
1
3
20
113
1
2
150
55 to150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
6.25
125
°C/W
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 183 mH, RG = 25 ,
IAR = 1 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
JEDEC
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
2002-02-27
Free Datasheet http://www.datasheet4u.com/




 K3498
2SK3498
Electrical Characteristics (Tc = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Symbol
Test Condition
Min
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
Yfs
Ciss
Crss
Coss
tr
ton
tf
toff
VGS = ±25 V, VDS = 0 V
IG = ±10 µA, VDS = 0 V
VDS = 400 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 0.5 A
VDS = 10 V, ID = 0.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
VG1S0 V
0V
ID = 0.5 A VOUT
RL = 400
Duty <= 1%, tw = 10 µs VDD ∼− 200 V
±30
450
2.0
0.3
Typ.
4.2
0.6
145
35
80
14
56
26
75
Max
±10
100
4.0
5.5
Unit
µA
V
µA
V
V
S
pF
ns
Qg
Qgs VDD ∼− 320 V, VGS = 10 V, ID = 1 A
Qgd
5.7
3.0 nC
2.7
Source-Drain Ratings and Characteristics (Tc = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 1 A, VGS = 0 V
IDR = 1 A, VGS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
 1 A
 3 A
  −1.7 V
650
ns
14.6
µC
Marking
K3498
Type
Lot Number
Month (starting from alphabet A)
Year (last number of the christian era)
2 2002-02-27
Free Datasheet http://www.datasheet4u.com/




 K3498
2SK3498
RESTRICTIONS ON PRODUCT USE
000707EAA
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
3 2002-02-27
Free Datasheet http://www.datasheet4u.com/






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