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POWER MOSFET. P20NM60 Datasheet

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POWER MOSFET. P20NM60 Datasheet






P20NM60 MOSFET. Datasheet pdf. Equivalent




P20NM60 MOSFET. Datasheet pdf. Equivalent





Part

P20NM60

Description

N-CHANNEL POWER MOSFET

Manufacture

ST Microelectronics

Datasheet
Download P20NM60 Datasheet


ST Microelectronics P20NM60

P20NM60; STB20NM60-1 - STP20NM60FP STB20NM60 - ST P20NM60 - STW20NM60 N-channel 600V - 0. 25Ω - 20A - TO-247 - TO-220/FP - D2/I 2PAK MDmesh™ Power MOSFET Features Type STP20NM60 STP20NM60FP STB20NM60 ST B20NM60-1 STW20NM60 VDSS 600V 600V 600 V 600V 600V RDS(on) < 0.29Ω < 0.29 < 0.29Ω < 0.29Ω < 0.29Ω ID 20A 20A 20A 20A 20A ■ High dv/dt and av alanche capabilities ■ 100% avalan.


ST Microelectronics P20NM60

che tested ■ Low input capacitance and gate charge ■ Low gate input resista nce Applications ■ Switching applica tions Description The MDmesh™ is a n ew revolutionary Power MOSFET technolog y that associates the multiple drain pr ocess with the company’s PowerMESH™ horizontal layout. The resulting produ ct has an outstanding low on-resistance , impressively high dv/dt and .


ST Microelectronics P20NM60

excellent avalanche characteristics. The adoption of the company’s proprietar y strip technique yields overall dynami c performance that is significantly bet ter than that of similar competition’ s products. Table 1. Device summary Pa rt number STP20NM60 STP20NM60FP STB20NM 60T4 STB20NM60-1 STW20NM60 Marking P20 NM60 P20NM60FP B20NM60 B20NM60-1 W20NM6 0 3 1 D²PAK 3 2 1 TO.



Part

P20NM60

Description

N-CHANNEL POWER MOSFET

Manufacture

ST Microelectronics

Datasheet
Download P20NM60 Datasheet




 P20NM60
STB20NM60-1 - STP20NM60FP
STB20NM60 - STP20NM60 - STW20NM60
N-channel 600V - 0.25- 20A - TO-247 - TO-220/FP - D2/I2PAK
MDmesh™ Power MOSFET
Features
Type
STP20NM60
STP20NM60FP
STB20NM60
STB20NM60-1
STW20NM60
VDSS
600V
600V
600V
600V
600V
RDS(on)
< 0.29
< 0.29
< 0.29
< 0.29
< 0.29
ID
20A
20A
20A
20A
20A
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Applications
Switching applications
Description
The MDmesh™ is a new revolutionary Power
MOSFET technology that associates the multiple
drain process with the company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Table 1. Device summary
Part number
STP20NM60
STP20NM60FP
STB20NM60T4
STB20NM60-1
STW20NM60
Marking
P20NM60
P20NM60FP
B20NM60
B20NM60-1
W20NM60
3
1
D²PAK
3
2
1
TO-220
3
2
1
TO-220FP
TO-247
123
I²PAK
Figure 1. Internal schematic diagram
Package
TO-220
TO-220FP
D²PAK
I²PAK
TO-247
Packaging
Tube
Tube
Tape & reel
Tube
Tube
August 2007
Rev 12
1/18
www.st.com
18





 P20NM60
Contents
Contents
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18





 P20NM60
STB20NM60/-1 - STP20NM60FP - STP20NM60 - STW20NM60
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220/D²PAK
I²PAK/TO-247
TO-220FP
VDS
VGS
ID
ID
IDM (2)
PTOT
dv/dt (3)
Drain-source voltage (VGS = 0)
Gate- source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD < 20A, di/dt < 400A/µs, VDD < V(BR)/DSS, Tj < TJMAX
600
±30
20 20 (1)
12.6
12.6 (1)
80 80 (1)
192 45
1.5 0.36
15
-- 2500
-65 to 150
150
Unit
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Tl
Maximum lead temperature for soldering
purpose
TO-220/D²PAK
I²PAK/TO-247
TO-220FP
0.65
62.5
2.8
Unit
°C/W
°C/W
300 °C
Table 4. Avalanche data
Symbol
Parameter
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAS, VDD = 50 V)
Max. value
10
650
Unit
A
mJ
3/18



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