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25P32 Dataheets PDF



Part Number 25P32
Manufacturers Eon Silicon Solution
Logo Eon Silicon Solution
Description EN25P32
Datasheet 25P32 Datasheet25P32 Datasheet (PDF)

EN25P32 EN25P32 32 Mbit Uniform Sector, Serial Flash Memory FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 volt • 32 M-bit Serial Flash - 32 M-bit/4096 K-byte/16384 pages - 256 bytes per programmable page • High performance - 100MHz clock rate • Low power consumption - 5 mA typical active current - 1 μA typical power down current • Uniform Sector Architecture: - Sixty four 64-Kbyte sectors • Software and Hardware Write Protection: - Write Protect all or portion of memory.

  25P32   25P32


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EN25P32 EN25P32 32 Mbit Uniform Sector, Serial Flash Memory FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 volt • 32 M-bit Serial Flash - 32 M-bit/4096 K-byte/16384 pages - 256 bytes per programmable page • High performance - 100MHz clock rate • Low power consumption - 5 mA typical active current - 1 μA typical power down current • Uniform Sector Architecture: - Sixty four 64-Kbyte sectors • Software and Hardware Write Protection: - Write Protect all or portion of memory via software - Enable/Disable protection with WP# pin • High performance program/erase speed Byte program time: 7µs typical Page program time: 1.5ms typical Sector erase time: 800ms typical Chip erase time: 25 Seconds typical • Lockable 512byte OTP security sector • Minimum 100K endurance cycle • Package Options 16 pins SOP 300mil body width 8 pins SOP 200mil body width 8 contact VDFN All Pb-free packages are RoHS compliant • Commercial and industrial temperature Range GENERAL DESCRIPTION The EN25P32 is a 32M-bit (4096K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25P32 is designed to allow either single Sector at a time or full chip erase operation. The EN25P32 can be configured to protect part of the memory as the software protected mode. The device can sustain a minimum of 100K program/erase cycles on each sector. This Data Sheet may be revised by subsequent versions 1 or modifications due to changes in technical specifications. ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2007/10/18 Free Datasheet http://www.datasheet4u.com/ EN25P32 Figure.1 CONNECTION DIAGRAMS 8 - LEAD SOP 8 - CONTACT VDFN 16 - LEAD SOP This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 2 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2007/10/18 Free Datasheet http://www.datasheet4u.com/ EN25P32 Figure 2. BLOCK DIAGRAM This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 3 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2007/10/18 Free Datasheet http://www.datasheet4u.com/ EN25P32 SIGNAL DESCRIPTION Serial Data Input (DI) The SPI Serial Data Input (DI) pin provides a means for instructions, addresses and data to be serially written to (shifted into) the device. Data is latched on the rising edge of the Serial Clock (CLK) input pin. Serial Data Output (DO) The SPI Serial Data Output (DO) pin provides a means for data and status to be serially read from (shifted out of) the device. Data is shifted out on the falling edge of the Serial Clock (CLK) input pin. Serial Clock (CLK) The SPI Serial Clock Input (CLK) pin provides the timing for serial input and output operations. ("See SPI Mode") Chip Select (CS#) The SPI Chip Select (CS#) pin enables and disables device operation. When CS# is high the device is deselected and the Serial Data Output (DO) pin is at high impedance. When deselected, the devices power consumption will be at standby levels unless an internal erase, program or status register cycle is in progress. When CS# is brought low the device will be selected, power consumption will increase to active levels and instructions can be written to and data read from the device. After power-up, CS# must transition from high to low before a new instruction will be accepted. Hold (HOLD#) The HOLD pin allows the device to be paused while it is actively selected. When HOLD is brought low, while CS# is low, the DO pin will be at high impedance and signals on the DI and CLK pins will be ignored (don’t care). The hold function can be useful when multiple devices are sharing the same SPI signals. Write Protect (WP#) The Write Protect (WP#) pin can be used to prevent the Status Register from being written. Used in conjunction with the Status Register’s Block Protect (BP0, BP1and BP2) bits and Status Register Protect (SRP) bits, a portion or the entire memory array can be hardware protected. Table 1. PIN Names Symbol CLK DI DO CS# WP# HOLD# Vcc Vss Pin Name Serial Clock Input Serial Data Input Serial Data Output Chip Enable Write Protect Hold Input Supply Voltage (2.7-3.6V) Ground This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. 4 ©2004 Eon Silicon Solution, Inc., www.essi.com.tw Rev. C, Issue Date: 2007/10/18 Free Datasheet http://www.datasheet4u.com/ EN25P32 MEMORY ORGANIZATION The memory is organized as: z 4,194,304 bytes z Uniform Sector Architecture z Sixty four 64-Kbyte sectors 16384 pages (256 bytes each) Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector or Bulk Erasable but not Page Erasable. Table 2 Block Sector Architecture Sector 63 62 61 6.


1SS239 25P32 A2636


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