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D-S MOSFET. SI4456DY Datasheet

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D-S MOSFET. SI4456DY Datasheet






SI4456DY MOSFET. Datasheet pdf. Equivalent




SI4456DY MOSFET. Datasheet pdf. Equivalent





Part

SI4456DY

Description

N-Channel 40-V (D-S) MOSFET



Feature


Si4456DY Vishay Siliconix N-Channel 40- V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.0038 at VGS = 10 V 0 .0045 at VGS = 4.5 V ID (A)a 33 31 Qg ( Typ.) 37.5 nC FEATURES • Halogen-fre e According to IEC 61249-2-21 Available • TrenchFET® Gen II Power MOSFET 100 % Rg and UIS Tested APPLICATIONS • Secondary Rectification • Point of Load SO-8 D S S S G 1 2 3 4.
Manufacture

Vishay

Datasheet
Download SI4456DY Datasheet


Vishay SI4456DY

SI4456DY; Top View S Ordering Information: Si4456 DY-T1-E3 (Lead (Pb)-free) Si4456DY-T1-G E3 (Lead (Pb)-free and Halogen-free) N- Channel MOSFET 8 7 6 5 D D D D G ABSOL UTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 ° C TC = 70 °C TA = 25 °C TA = 70 °C T C = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 .


Vishay SI4456DY

°C TA = 70 °C Symbol VDS VGS Limit 40 ± 20 33 27 23b, c 18b, c 70 7.0 3.0b, c 40 80 7.8 5.0 3.5b, c 2.2b, c - 55 to 150 Unit V Continuous Drain Current ( TJ = 150 °C) ID Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single Pulse Avalanch e Energy IDM IS IAS EAS A mJ Maximu m Power Dissipation PD W Operating J unction and Storage Te.


Vishay SI4456DY

mperature Range TJ, Tstg THERMAL RESIS TANCE RATINGS Parameter Maximum Junctio n-to-Ambientb, d Maximum Junction-to-Fo ot (Drain) t≤5s Steady State Symbol R thJA RthJF Typical 29 13 Maximum 35 16 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under ste ady state conditions is 80 °C/W. Docum ent Number: 73852 S09-0.

Part

SI4456DY

Description

N-Channel 40-V (D-S) MOSFET



Feature


Si4456DY Vishay Siliconix N-Channel 40- V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.0038 at VGS = 10 V 0 .0045 at VGS = 4.5 V ID (A)a 33 31 Qg ( Typ.) 37.5 nC FEATURES • Halogen-fre e According to IEC 61249-2-21 Available • TrenchFET® Gen II Power MOSFET 100 % Rg and UIS Tested APPLICATIONS • Secondary Rectification • Point of Load SO-8 D S S S G 1 2 3 4.
Manufacture

Vishay

Datasheet
Download SI4456DY Datasheet




 SI4456DY
N-Channel 40-V (D-S) MOSFET
Si4456DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
40
RDS(on) (Ω)
0.0038 at VGS = 10 V
0.0045 at VGS = 4.5 V
ID (A)a
33
31
Qg (Typ.)
37.5 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Gen II Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• Secondary Rectification
• Point of Load
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
D
G
Top View
Ordering Information: Si4456DY-T1-E3 (Lead (Pb)-free)
Si4456DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
IS
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
40
± 20
33
27
23b, c
18b, c
70
7.0
3.0b, c
40
80
7.8
5.0
3.5b, c
2.2b, c
- 55 to 150
Unit
V
A
mJ
W
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t5s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 80 °C/W.
Document Number: 73852
S09-0138-Rev. B, 02-Feb-09
Symbol
RthJA
RthJF
Typical
29
13
Maximum
35
16
Unit
°C/W
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 SI4456DY
Si4456DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
Ciss
Coss
Crss
Qg
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 55 °C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 15 A
VDS = 15 V, ID = 20 A
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = 20 V, VGS = 10 V, ID = 20 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
ta
tb
VDS = 20 V, VGS = 4.5 V, ID = 20 A
f = 1 MHz
VDD = 20 V, RL = 2 Ω
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 20 V, RL = 2 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
TC = 25 °C
IS = 3 A
IF = 13 A, dI/dt = 100 A/µs, TJ = 25 °C
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
40
1.5
30
Typ.
54
-7
0.0031
0.0037
110
5670
621
287
81
37.5
17
11
1.05
145
208
56
15
21
58
55
8
0.71
38
42
21
17
Max.
2.8
± 100
1
10
0.0038
0.0045
122
57
1.6
220
320
85
23
32
90
85
15
7
70
1.1
60
65
Unit
V
mV/°C
V
nA
µA
A
Ω
S
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
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Document Number: 73852
S09-0138-Rev. B, 02-Feb-09
Free Datasheet http://www.datasheet4u.com/




 SI4456DY
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
70 1.2
VGS = 10 V thru 4 V
56
0.9
42
0.6
28
0.3
14
VGS = 3 V
0
0.0
0.0045
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
0.0
0
7000
0.0041
0.0037
VGS = 4.5 V
5600
4200
Si4456DY
Vishay Siliconix
TC = 25 °C
TC = 125 °C
12
TC = - 55 °C
34
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
Ciss
0.0033
0.0029
VGS = 10 V
0.0025
0
10 20 30 40 50 60
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 20 A
8
VDS = 10 V
6 VDS = 20 V
VDS = 30 V
4
2800
1400
0 Crss
0
Coss
8 16 24 32
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 10 V, ID = 20 A
1.4
40
1.2
VGS = 4.5 V, ID = 20 A
1.0
2 0.8
0
0 17 34 51 68 85
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73852
S09-0138-Rev. B, 02-Feb-09
www.vishay.com
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