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M27C322. 27C322 Datasheet

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M27C322. 27C322 Datasheet






27C322 M27C322. Datasheet pdf. Equivalent




27C322 M27C322. Datasheet pdf. Equivalent





Part

27C322

Description

M27C322



Feature


M27C322 32 Mbit (2Mb x16) UV EPROM and O TP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 80ns WORD- WIDE CONFIGURABLE 32 Mbit MASK ROM REPL ACEMENT LOW POWER CONSUMPTION – Activ e Current 50mA at 5MHz 1 42 42 s s s s – Stand-by Current 100µA s s s 1 PROGRAMMING VOLTAGE: 12V ± 0.25V PROG RAMMING TIME: 50µs/word ELECTRONIC SIG NATURE – Manufacturer Code.
Manufacture

STMicroelectronics

Datasheet
Download 27C322 Datasheet


STMicroelectronics 27C322

27C322; : 0020h – Device Code: 0034h FDIP42W (F) PDIP42 (P) Figure 1. Logic Diagra m DESCRIPTION The M27C322 is a 32 Mbit EPROM offered in the UV range (ultra v iolet erase). It is ideally suited for microprocessor systems requiring large data or program storage. It is organise d as 2 MWords of 16 bit. The pin-out is compatible with a 32 Mbit Mask ROM. Th e FDIP42W (window ce.


STMicroelectronics 27C322

ramic frit-seal package) has a transpare nt lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written rapidly to the device by fo llowing the programming procedure. For applications where the content is progr ammed only one time and erasure is not required, the M27C322 is offered in PDI P42 package. VCC .


STMicroelectronics 27C322

21 A0-A20 16 Q0-Q15 E GVPP M27C322 VSS AI02156 April 2000 1/13 Free Dat asheet http://www.datasheet4u.com/ M27 C322 Figure 2A. DIP Connections A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 E VSS GVPP Q0 Q8 Q1 Q9 Q2 Q10 Q3 Q11 1 42 2 41 3 40 4 39 5 38 6 37 7 36 35 8 9 34 10 33 M27C 322 32 11 31 12 30 13 29 14 28 15 27 16 17 26 18 25 19 24 20 23 22 21 AI02157 Table 1. Signal N.

Part

27C322

Description

M27C322



Feature


M27C322 32 Mbit (2Mb x16) UV EPROM and O TP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 80ns WORD- WIDE CONFIGURABLE 32 Mbit MASK ROM REPL ACEMENT LOW POWER CONSUMPTION – Activ e Current 50mA at 5MHz 1 42 42 s s s s – Stand-by Current 100µA s s s 1 PROGRAMMING VOLTAGE: 12V ± 0.25V PROG RAMMING TIME: 50µs/word ELECTRONIC SIG NATURE – Manufacturer Code.
Manufacture

STMicroelectronics

Datasheet
Download 27C322 Datasheet




 27C322
M27C322
32 Mbit (2Mb x16) UV EPROM and OTP EPROM
s 5V ± 10% SUPPLY VOLTAGE in READ
OPERATION
s ACCESS TIME: 80ns
s WORD-WIDE CONFIGURABLE
s 32 Mbit MASK ROM REPLACEMENT
s LOW POWER CONSUMPTION
– Active Current 50mA at 5MHz
– Stand-by Current 100µA
s PROGRAMMING VOLTAGE: 12V ± 0.25V
s PROGRAMMING TIME: 50µs/word
s ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code: 0034h
DESCRIPTION
The M27C322 is a 32 Mbit EPROM offered in the
UV range (ultra violet erase). It is ideally suited for
microprocessor systems requiring large data or
program storage. It is organised as 2 MWords of
16 bit. The pin-out is compatible with a 32 Mbit
Mask ROM.
The FDIP42W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written rapidly to
the device by following the programming proce-
dure.
For applications where the content is programmed
only one time and erasure is not required, the
M27C322 is offered in PDIP42 package.
42
1
FDIP42W (F)
42
1
PDIP42 (P)
Figure 1. Logic Diagram
VCC
21
A0-A20
16
Q0-Q15
E
GVPP
M27C322
VSS
AI02156
April 2000
1/13
Free Datasheet http://www.datasheet4u.com/




 27C322
M27C322
Figure 2A. DIP Connections
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
E
VSS
GVPP
Q0
Q8
Q1
Q9
Q2
Q10
Q3
Q11
1 42 A19
2 41 A8
3 40 A9
4 39 A10
5 38 A11
6 37 A12
7 36 A13
8 35 A14
9 34 A15
10 33 A16
M27C322
11 32 A20
12 31 VSS
13 30 Q15
14 29 Q7
15 28 Q14
16 27 Q6
17 26 Q13
18 25 Q5
19 24 Q12
20 23 Q4
21 22 VCC
AI02157
DEVICE OPERATION
The operating modes of the M27C322 are listed in
the Operating Modes Table. A single power supply
is required in the read mode. All inputs are TTL
compatible except for VPP and 12V on A9 for the
Electronic Signature.
Read Mode
The M27C322 has a word-wide organization. Chip
Enable (E) is the power control and should be
used for device selection. Output Enable (G) is the
output control and should be used to gate data to
the output pins independent of device selection.
Assuming that the addresses are stable, the ad-
dress access time (tAVQV) is equal to the delay
Table 1. Signal Names
A0-A20
Address Inputs
Q0-Q15
Data Outputs
E Chip Enable
GVPP
Output Enable / Program Supply
VCC Supply Voltage
VSS Ground
from E to output (tELQV). Data is available at the
output after a delay of tGLQV from the falling edge
of GVPP, assuming that E has been low and the
addresses have been stable for at least tAVQV-
tGLQV.
Standby Mode
The M27C322 has a standby mode which reduces
the supply current from 50mA to 100µA. The
M27C322 is placed in the standby mode by apply-
ing a CMOS high signal to the E input.When in the
standby mode, the outputs are in a high imped-
ance state, independent of the GVPP input.
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, this product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while GVPP should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
2/13
Free Datasheet http://www.datasheet4u.com/




 27C322
M27C322
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
Value
Unit
TA Ambient Operating Temperature (3)
–40 to 125
°C
TBIAS
Temperature Under Bias
–50 to 125
°C
TSTG
Storage Temperature
–65 to 150
°C
VIO (2)
Input or Output Voltage (except A9)
–2 to 7
V
VCC Supply Voltage
–2 to 7
V
VA9 (2)
A9 Voltage
–2 to 13.5
V
VPP Program Supply Voltage
–2 to 14
V
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is VCC +0.5V with possible overshoot to VCC +2V for a period less than 20ns.
3. Depends on range.
Table 3. Operating Modes
Mode
Read
Output Disable
Program
Program Inhibit
Standby
Electronic Signature
Note: X = VIH or VIL, VID = 12V ± 0.5V.
E
VIL
VIL
VIL Pulse
VIH
VIH
VIL
GVPP
VIL
VIH
VPP
VPP
X
VIL
A9 Q15-Q0
X Data Out
X Hi-Z
X Data In
X Hi-Z
X Hi-Z
VID Codes
Table 4. Electronic Signature
Identifier
A0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Hex Data
Manufacturer’s Code
VIL
0
0
1
0
0
0
0
0
20h
Device Code
VIH 0 0 1 1 0 1 0 0
Note: Outputs Q15-Q8 are set to '0'.
34h
3/13
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