2SK2960

Power F-MOS FETs 2SK2960 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 250mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 55ns q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 M Di ain sc te on na tin nc ue e/ d q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.3 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2 s Applications 13.7–0.2 +0.5 1.2±0.15 1.45±0.15 0.75±0.1 2.6±0.1 0.7±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Drain to Source breakdown voltage Gate to Source voltage Drain current VDSS VGSS ID IDP DC Pulse Avalanche energy capacity Allowable power dissipation TC = 25°C Ta = 25°C Channel temperature Storage temperature * L = 5mH, IL = 10A, 1 pulse s Electrical Characteristics (TC = 25°C) Parameter Symbol Drain to Source cut-off current Gate to Source leakage current IDSS IGSS Vth Drain to Source breakdown voltage Gate threshold voltage Pl Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss td(on) tr td(off) tf VGS = 10V, ID = 5A VDD = 100V, RL = 20Ω VDS = 10V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la ...