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F-MOS FET. K2960 Datasheet

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F-MOS FET. K2960 Datasheet






K2960 FET. Datasheet pdf. Equivalent




K2960 FET. Datasheet pdf. Equivalent





Part

K2960

Description

Silicon N-Channel Power F-MOS FET

Manufacture

Panasonic

Datasheet
Download K2960 Datasheet


Panasonic K2960

K2960; Power F-MOS FETs 2SK2960 Silicon N-Chan nel Power F-MOS FET s Features q Avalan che energy capacity guaranteed: EAS > 2 50mJ q VGSS = ±30V guaranteed q High-s peed switching: tf = 55ns q No secondar y breakdown unit: mm 4.6±0.2 φ3.2±0. 1 9.9±0.3 2.9±0.2 M Di ain sc te on na tin nc ue e/ d q Contactless relay q Diving circuit for a solenoid q Drivin g circuit for a motor q .


Panasonic K2960

Control equipment q Switching power supp ly 15.0±0.3 4.1±0.2 8.0±0.2 Solder D ip 3.0±0.2 s Applications 13.7–0.2 +0.5 1.2±0.15 1.45±0.15 0.75±0.1 2.6±0.1 0.7±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Symbol Drain to Source breakdown voltage Gate to Source voltage Drain current VDSS VG SS ID IDP DC Pulse Avalanche energy capacity Allowable power dissi.


Panasonic K2960

pation TC = 25°C Ta = 25°C Channel t emperature Storage temperature * L = 5mH, IL = 10A, 1 pulse s Electrical Ch aracteristics (TC = 25°C) Parameter Sy mbol Drain to Source cut-off current Ga te to Source leakage current IDSS IGSS Vth Drain to Source breakdown voltage Gate threshold voltage Pl Drain to So urce ON-resistance Forward transfer adm ittance Diode forward.



Part

K2960

Description

Silicon N-Channel Power F-MOS FET

Manufacture

Panasonic

Datasheet
Download K2960 Datasheet




 K2960
Power F-MOS FETs
2SK2960
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 250mJ
q VGSS = ±30V guaranteed
q High-speed switching: tf = 55ns
q No secondary breakdown
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
VDSS
VGSS
ID
IDP
EAS*
400
±30
±10
±20
250
Allowable power
dissipation
TC = 25°C
PD
Ta = 25°C
50
2
Channel temperature
Storage temperature
Tch 150
Tstg 55 to +150
* L = 5mH, IL = 10A, 1 pulse
Unit
V
V
A
A
mJ
W
°C
°C
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Vth
Drain to Source ON-resistance RDS(on)
Forward transfer admittance
| Yfs |
Diode forward voltage
VDSF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time (delay time)
td(on)
Rise time
tr
Turn-off time (delay time)
td(off)
Fall time
tf
VDS = 320V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 10V, ID = 1mA
VGS = 10V, ID = 5A
VDS = 10V, ID = 5A
IDR = 10A, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
VGS = 10V, ID = 5A
VDD = 100V, RL = 20
9.9±0.3
φ3.2±0.1
unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7 123
1: Gate
2: Drain
3: Source
TO-220E Package
min typ max Unit
0.1 mA
±1 µA
400 V
2 5V
0.4 0.52
35
S
1.5 V
1400
pF
290 pF
100 pF
25 ns
50 ns
170 ns
55 ns
1
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 K2960
Power F-MOS FETs
ID VGS
10.0
VDS=10V
Ta=25˚C
7.5
5.0
2.5
0
012345678
Gate to source voltage VGS (V)
| Yfs | ID
8
VDS=25V
Ta=25˚C
7
6
5
4
3
2
1
0
0 2.5 5.0 7.5 10.0
Drain current ID (A)
RDS(on) VGS
6
Ta=25˚C
5
4
3
2
1
0
0 5 10 15 20 25 30
Gate to source voltage VGS (V)
Ciss, Coss, Crss VDS
104
f=1MHz
Ta=25˚C
Ciss
103
Coss
102
Crss
10
0 25 50 75 100
Drain to source voltage VDS (V)
Rth(t) t
102
Note: Rth was measured at Ta=25˚C
and under natural convection.
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
10
(1)
(2)
1
2SK2960
800
700
600
500
400
300
200
100
0
0
RDS(on) ID
Ta=25˚C
VGS=10V
2.5 5.0 7.5
Drain current ID (A)
10.0
td(on), tr, tf, td(off) ID
250
VDD=100V
VGS=10V
200
150
td(off)
100
50 tf
tr
td(on)
0
0 2 4 6 8 10
Drain current ID (A)
10–1
10–2
10–4
10–3
10–2
10–1
1
Time t (s)
10 102 103
2
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 K2960
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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