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bridge inverter. SKIIP82AC12I Datasheet

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bridge inverter. SKIIP82AC12I Datasheet






SKIIP82AC12I inverter. Datasheet pdf. Equivalent




SKIIP82AC12I inverter. Datasheet pdf. Equivalent





Part

SKIIP82AC12I

Description

IGBT 3-phase bridge inverter



Feature


SKiiP 82 AC 12 - SKiiP 82 AC 12 I Absolu te Maximum Ratings Symbol VCES VGES IC ICM Tj Tstg Visol Conditions 1) Values 1200 ± 20 95 / 65 190 / 130 – 40 . . . + 150 – 40 . . . + 125 2500 80 / 5 3 160 / 106 720 2600 Units V V A A °C °C V A A A A2 s Theatsink = 25 / 80 C tp < 1 ms; Theatsink = 25 / 80 °C A C, 1 min. MiniSKiiP 8 SEMIKRON integra ted intelligent Power SKiiP.
Manufacture

Semikron

Datasheet
Download SKIIP82AC12I Datasheet


Semikron SKIIP82AC12I

SKIIP82AC12I; 82 AC 12 SKiiP 82 AC 12 I 3) IGBT 3-pha se bridge inverter Inverse Diode IF = –IC Theatsink = 25 / 80 °C IFM = – ICM tp < 1 ms; Theatsink = 25 / 80 °C tp = 10 ms; sin., Tj = 25 °C IFSM tp = 10 ms; sin., Tj = 25 °C I2t Case M8 Characteristics Symbol Conditions 1) I GBT - Inverter IC = 75 A Tj = 25 (125) °C VCEsat VCC = 600 V; VGE = ± 15 V t d(on) IC = 75 A; Tj = 125 °C.


Semikron SKIIP82AC12I

tr Rgon = Rgoff = 15 Ω td(off) induct ive load tf Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Rthjh Diode 2) - Inverter VF = VEC IF = 75 A Tj = 2 5 (125) °C Tj = 125 °C VTO Tj = 125 C rT IF = 75 A, VR = – 600 V IRRM di F/dt = – 800 A/µs Qrr VGE = 0 V, Tj = 125 °C Eoff per diode Rthjh min. – – – – – – – – – – – – – – typ. max. Units V 2,5(3,1) 3,0(3,7) ns 70.


Semikron SKIIP82AC12I

35 ns 140 70 ns 600 450 ns 100 70 mJ 18 nF – 5,0 K/W 0,35 – V 2,0(1,8) 2,5(2.3) V 1,2 1,0 mΩ 15 11 A – 45 µC – 11 mJ – 3,0 K/W 0,8 – ~ ~ ~ UL recognized file no. E63532 • • more detailed characteristics of c urrent sensors and temperature sensor p lease refer to part A common characteri stics see page B 16 – 4 Theatsink = 2 5 °C, unless otherwise specified CAL = Co.

Part

SKIIP82AC12I

Description

IGBT 3-phase bridge inverter



Feature


SKiiP 82 AC 12 - SKiiP 82 AC 12 I Absolu te Maximum Ratings Symbol VCES VGES IC ICM Tj Tstg Visol Conditions 1) Values 1200 ± 20 95 / 65 190 / 130 – 40 . . . + 150 – 40 . . . + 125 2500 80 / 5 3 160 / 106 720 2600 Units V V A A °C °C V A A A A2 s Theatsink = 25 / 80 C tp < 1 ms; Theatsink = 25 / 80 °C A C, 1 min. MiniSKiiP 8 SEMIKRON integra ted intelligent Power SKiiP.
Manufacture

Semikron

Datasheet
Download SKIIP82AC12I Datasheet




 SKIIP82AC12I
SKiiP 82 AC 12 - SKiiP 82 AC 12 I
Absolute Maximum Ratings
Symbol Conditions 1)
VCES
VGES
IC
ICM
Tj
Tstg
Visol
Theatsink = 25 / 80 °C
tp < 1 ms; Theatsink = 25 / 80 °C
AC, 1 min.
Inverse Diode
IF = –IC
IFM = –ICM
IFSM
I2t
Theatsink = 25 / 80 °C
tp < 1 ms; Theatsink = 25 / 80 °C
tp = 10 ms; sin., Tj = 25 °C
tp = 10 ms; sin., Tj = 25 °C
Values
1200
± 20
95 / 65
190 / 130
– 40 . . . + 150
– 40 . . . + 125
2500
80 / 53
160 / 106
720
2600
Units
V
V
A
A
°C
°C
V
A
A
A
A2s
Characteristics
Symbol Conditions 1)
min. typ. max. Units
IGBT - Inverter
VCEsat
td(on)
tr
td(off)
tf
Eon + Eoff
Cies
Rthjh
IC = 75 A Tj = 25 (125) °C
VCC = 600 V; VGE = ± 15 V
IC = 75 A; Tj = 125 °C
Rgon = Rgoff = 15
inductive load
VCE = 25 V; VGE = 0 V, 1 MHz
per IGBT
Diode 2) - Inverter
VF = VEC
VTO
rT
IRRM
Qrr
Eoff
Rthjh
IF = 75 A Tj = 25 (125) °C
Tj = 125 °C
Tj = 125 °C
IF = 75 A, VR = – 600 V
diF/dt = – 800 A/µs
VGE = 0 V, Tj = 125 °C
per diode
– 2,5(3,1) 3,0(3,7) V
– 35 70 ns
– 70 140 ns
– 450 600 ns
– 70 100 ns
– 18 – mJ
– 5,0 – nF
– – 0,35 K/W
– 2,0(1,8) 2,5(2.3) V
– 1,0 1,2 V
– 11 15 m
– 45 – A
– 11 – µC
– 3,0 – mJ
– – 0,8 K/W
Current sensor for three phase output ac current (SKiiP 82 AC 12 I)
Ip RMS
Ipmax RMS
Ip peak
Rout
Is RMS
Ip : Is
Offset error
Linearity
Continuous current,
T = 100 °C, Vsuppl = ± 15 V
t2s
t 10 µs
terminating resistance
rated sensor current
at Ip = 50 ARMS
transfer ratio
IP = 0 A, T = – 40 ... 100 °C
– 50 –
– – 80
– 1000 –
– 50 –
25
1 : 2000
– ± 0,2 –
– 0,1 –
delay time IP =
10 % – 80 %
90 % – 20 %
– <1 –
– <1 –
Bandwidth
0 – 100 (– 3dB)
A
A
A
mA
mA
%
µs
µs
kHz
Temperature Sensor
RTS T = 25 / 100 °C
1000 / 1670
Mechanical Data
M1
Case
case to heatsink, SI Units
2,5 – 3,5 Nm
mechanical outline see pages
M8
B 16 – 11 and B 16 – 12
MiniSKiiP 8
SEMIKRON integrated
intelligent Power
SKiiP 82 AC 12
SKiiP 82 AC 12 I 3)
IGBT
3-phase bridge inverter
Case M8
~
~
~
UL recognized file no. E63532
more detailed characteristics of
current sensors and temperature
sensor please refer to part A
common characteristics see
page B 16 – 4
1) Theatsink = 25 °C, unless
otherwise specified
2) CAL = Controlled Axial Lifetime
Technology (soft and fast
recovery)
3) With integrated closed loop
current sensors
© by SEMIKRON
0698
B 16 – 65
Free Datasheet http://www.datasheet4u.com/




 SKIIP82AC12I
IC [A]
150
82AC1201
135
17V
120
15V
105
13V
90
11V
75 9V
60 7V
45
30
15
0
012345
VCE [V]
Fig. 1 Typ. output characteristic, tp = 80 µs; 25 °C
IC [A]
150
82AC1202
135
17V
120
15V
105
13V
90 11V
75 9V
60 7V
45
30
15
0
012345
VCE [V]
Fig. 2 Typ. output characteristic, tp = 80 µs; 125 °C
82AC1203.xls
82AC1204.xls
30
Tj = 125 °C
24
Tj = 125 °C
mJ
VCE = 600 V
mJ
VCE = 600 V
25 VGE = ± 15 V
VGE = ± 15 V
Eon RG = 15
18
Eon IC = 75 A
20
15
Eoff
10
5
E
0
0 IC 30 60 90 120 A 150
Fig. 3 Turn-on /-off energy = f (IC)
VGE [V]
20
82AC1205
18
600V
16
800V
14
ICpuls = 75 A
12
10
8
6
4
2
0
0 120 240 360 480
QG [nC]
Fig. 5 Typ. gate charge characteristic
12
Eoff
6
E
0
0 RG 10 20 30 40
Fig. 4 Turn-on /-off energy = f (RG)
VGE = 0 V
f = 1 MHz
Fig. 6 Typ. capacitances vs. VCE
B 16 – 66
0698
© by SEMIKRON
Free Datasheet http://www.datasheet4u.com/




 SKIIP82AC12I
MiniSKiiP 1200 V
ICop / IC
1.2
1.0
Mini1207
Tj = 150 °C
VGE = 15 V
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
Th [°C]
Fig. 7 Rated current of the IGBT ICop / IC = f (Th)
ICpuls/IC
2,5
Mini1209
Tj = 150 °C
VGE = ± 15 V
2
1,5
1
0,5
ICsc/ICN
12
10
8
Note:
*Allowed numbers of
6
short circuit:<1000
*Time between short
circuit:>1s
4
2
Mini1210
Tj = 150 °C
VGE = ± 15 V
tsc = 10 µs
Lext < 25 nH
0
0
500
1000
1500
VCE [V]
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT
0
0
500
1000
1500
VCE [V]
Fig. 10 Safe operating area at short circuit of the IGBT
Fig. 11 Typ. freewheeling diode forward characteristic
Fig. 12 Forward characteristic of the input bridge diode
B 16 – 4
0698
© by SEMIKRON
Free Datasheet http://www.datasheet4u.com/






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