ME75N75T-G

ME75N75T / ME75N75T-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION The ME75N75T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. FEATURES ● RDS(ON)≦10mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS PIN CONFIGURATION (TO-220) Top View ● Power Management ● DC/DC Converter ● Load Switch e Ordering Information: ME75N75T (Pb-free) ME75N75T-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current* Pulsed Drain Current Maximum Power Dissipation TC=25℃ TC=70℃ TC=25℃ TC=70℃ Symbol VDSS VGSS ID IDM PD TJ, Tstg RθJC Limit 75 ±25 93 78 372 200 140 -55 to 175 0.75 Unit V V A A W ℃ ℃/W Operating Junction and Storage Temperature Range Thermal Resistance-Junction to Case** ** The device mounted on 1in2 FR4 board with 2 oz copper. * Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 80A. Apr, 2010-Ver1.0 Free Datasheet http://www.datasheet4u.com/ 01 ME75N75T / ME75N75T-G N- Channel 75-V (D-S) MOSFET Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol STATIC BVDSS VGS(th) IGSS IDSS RDS(ON) VSD DYNAMIC Qg Qg Qgs Qgd Rg Ciss Coss Crss Total...