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N-channel MOSFET. KF12N60P Datasheet

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N-channel MOSFET. KF12N60P Datasheet






KF12N60P MOSFET. Datasheet pdf. Equivalent




KF12N60P MOSFET. Datasheet pdf. Equivalent





Part

KF12N60P

Description

N-channel MOSFET



Feature


SEMICONDUCTOR TECHNICAL DATA General De scription This planar stripe MOSFET ha s better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche cha racteristics. It is mainly suitable for active power factor correction and swi tching mode power supplies. FEATURES V DSS=600V, ID=12A Drain-Source ON Resist ance : RDS(ON)=0.6.
Manufacture

KEC

Datasheet
Download KF12N60P Datasheet


KEC KF12N60P

KF12N60P; (Max) @VGS=10V Qg(typ.)= 36nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KF12N60P KF12N60F Drai n-Source Voltage Gate-Source Voltage V DSS VGSS 600 30 V V @TC=25 Drain Cu rrent @TC=100 Pulsed (Note1) Single P ulsed Avalanche Energy (Note 2) Repetit ive Avalanche Energy (Note 1) Peak Diod e Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25.


KEC KF12N60P

Derate above 25 ID IDP EAS EAR dv/dt P D 12 12* 7.4 7.4* 33 33* 450 17 4.5 21 5 49.8 1.72 0.4 A mJ mJ V/ns W W/ Max imum Junction Temperature Storage Tempe rature Range Thermal Characteristics T j Tstg 150 -55 150 Thermal Resistance , Junction-to-Case RthJC 0.58 Thermal Resistance, Junction-to-Ambient RthJA 62.5 * : Drain current limited by ma ximum junction tem.


KEC KF12N60P

perature. 2.51 /W 62.5 /W EQUIVALENT C IRCUIT D Q KF12N60P/F N CHANNEL MOS F IELD EFFECT TRANSISTOR KF12N60P A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.9 +_ 0.2 15.95 MAX 1.3+0.1/-0.05 0.8 +_ 0.1 3.6 +_ 0.2 2.8+_ 0.1 3.7 0.5+0.1 /-0.05 1.5 13.08+_ 0.3 1.46 1.4 +_ 0.1 1.27+_ 0.1 2.54 +_.

Part

KF12N60P

Description

N-channel MOSFET



Feature


SEMICONDUCTOR TECHNICAL DATA General De scription This planar stripe MOSFET ha s better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche cha racteristics. It is mainly suitable for active power factor correction and swi tching mode power supplies. FEATURES V DSS=600V, ID=12A Drain-Source ON Resist ance : RDS(ON)=0.6.
Manufacture

KEC

Datasheet
Download KF12N60P Datasheet




 KF12N60P
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
VDSS=600V, ID=12A
Drain-Source ON Resistance :
RDS(ON)=0.6 (Max) @VGS=10V
Qg(typ.)= 36nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KF12N60P KF12N60F
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
600
30
V
V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
12 12*
7.4 7.4*
33 33*
450
17
4.5
215 49.8
1.72 0.4
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
150
-55 150
Thermal Resistance, Junction-to-Case RthJC
0.58
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
2.51 /W
62.5 /W
EQUIVALENT CIRCUIT
D
KF12N60P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF12N60P
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
KF12N60F
AC
E
LM
D
NN
R
H
123
1. GATE
2. DRAIN
3. SOURCE
*Single Gauge Lead Frame
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
TO-220IS (1)
G
2013. 5. 06
S
Revision No : 4
1/7




 KF12N60P
KF12N60P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=600V, VGS=0V
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
Vth
IGSS
RDS(ON)
VDS=VGS, ID=250 A
VGS= 30V, VDS=0V
VGS=10V, ID=6A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=480V, ID=12A
VGS=10V
(Note4,5)
Qgd
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
td(on)
tr
td(off)
tf
Ciss
Coss
VDD=300V
ID=12A
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Crss
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
IS
VGS<Vth
ISP
VSD IS=12A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr IS=12A, VGS=0V,
Qrr dIs/dt=100A/ s
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =5.7mH, IS=12A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 12A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
MIN. TYP. MAX. UNIT
600 - - V
- 0.63 - V/
- - 10 A
2.5 - 4.5 V
- - 100 nA
- 0.51 0.6
- 36 -
- 8.5 -
- 13.5 -
- 30 -
- 40 -
- 115 -
- 55 -
- 1700 -
- 185 -
- 20 -
nC
ns
pF
- - 12
A
- - 48
- - 1.4 V
- 370 -
ns
- 4.6 -
C
1
KF12N60
P 801
1
KF12N60
F 801
2
2
1 PRODUCT NAME
2 LOT NO
2013. 5. 06
Revision No : 4
2/7




 KF12N60P
KF12N60P/F
Fig1. ID - VDS
100
VGS=10V
VGS=6V
10
VGS=5V
1
0.1
0.1
1 10
Drain - Source Voltage VDS (V)
100
1.2
VGS = 0V
IDS = 250
1.1
Fig3. BVDSS - Tj
1.0
0.9
0.8
-100
-50 0 50 100
Junction Temperature Tj ( C )
150
Fig5. IS - VSD
102
100 C
25 C
101
100
10-1
0.4
0.6 0.8 1.0 1.2 1.4
Source - Drain Voltage VSD (V)
1.8
2013. 5. 06
Revision No : 4
VDS=20V
101
Fig2. ID - VGS
100
100 C
25 C
10-1
2
468
Gate - Source Voltage VGS (V)
10
Fig4. RDS(ON) - ID
1.2
1.0
VGS=6V
0.6
VGS=10V
0.2
0 5 10 15 20
Drain Current ID (A)
3.0
VGS =10V
IDS = 6A
2.5
Fig6. RDS(ON) - Tj
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50 100
Junction Temperature Tj ( C)
150
3/7






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