KF12N60F

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=12A Drain-Source ON Resistance : RDS(ON)=0.6 (Max) @VGS=10V Qg(typ.)= 36nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KF12N60P KF12N60F Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 30 V V @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 12 12* 7.4 7.4* 33 33* 450 17 4.5 215 49.8 1.72 0.4 A mJ mJ V/ns W W/ Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg 150 -55 150 Thermal Resistance, Junction-to-Case RthJC 0.58 Thermal Resistance, Junction-to-Ambient RthJA 62.5 * : Drain current limited by maximum junction temperature. 2.51 /W 62.5 /W EQUIVALENT CIRCUIT D Q KF12N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF12N60P A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM A B C D E F G H I J K L M N O P Q MILLIMETERS 9.9 +_ 0.2 15.95 MAX 1.3+0.1/-0.05 0.8+_ 0.1 3.6 +_ 0.2 2.8+_ 0.1 3.7 0.5+0.1/-0.05 1.5 13.08+_ 0.3 1.46 1.4 +_ 0.1 1.27+_ 0.1 2.54 +_ 0.2 4.5 +_ 0.2 2.4 ...