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2SC5856. C5856 Datasheet

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2SC5856. C5856 Datasheet






C5856 2SC5856. Datasheet pdf. Equivalent




C5856 2SC5856. Datasheet pdf. Equivalent





Part

C5856

Description

2SC5856

Manufacture

Toshiba Semiconductor

Datasheet
Download C5856 Datasheet


Toshiba Semiconductor C5856

C5856; www.DataSheet4U.com 2SC5856 TOSHIBA TRA NSISTOR SILICON NPN TRIPLE DIFFUSED MES A TYPE 2SC5856 HORIZONTAL DEFLECTION O UTPUT FOR SUPER HIGH RESOLUTION DISPLAY , COLOR TV, DIGITAL TV HIGH SPEED SWITC HING APPLICATIONS z High Voltage z Low Saturation Voltage z High Speed : VCBO = 1500 V : VCE (sat) = 3 V (max) : tf(2 ) = 0.1 µs (typ.) Unit: mm ABSOLUTE M AXIMUM RATINGS (Tc .


Toshiba Semiconductor C5856

= 25°C) CHARACTERISTIC Collector−Base Voltage Collector−Emitter Voltage Em itter−Base Voltage Collector Current Base Current Collector Power Dissipatio n Junction Temperature Storage Temperat ure Range DC Pulse SYMBOL VCBO VCEO VEB O IC ICP IB PC Tj Tstg RATING 1500 700 5 14 28 7 55 150 −55~150 UNIT V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-16E3A Weight: 5.5 g (typ.).


Toshiba Semiconductor C5856

Note: Using continuously under heavy l oads (e.g. the application of high temp erature/current/voltage and the signifi cant change in temperature, etc.) may c ause this product to decrease in the re liability significantly even if the ope rating conditions (i.e. operating tempe rature/current/voltage, etc.) are withi n the absolute maximum ratings. Please design the appropr.



Part

C5856

Description

2SC5856

Manufacture

Toshiba Semiconductor

Datasheet
Download C5856 Datasheet




 C5856
www.DataSheet4U.com
2SC5856
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5856
HORIZONTAL DEFLECTION OUTPUT FOR
SUPER HIGH RESOLUTION
DISPLAY, COLOR TV, DIGITAL TV
HIGH SPEED SWITCHING APPLICATIONS
Unit: mm
z High Voltage
z Low Saturation Voltage
z High Speed
: VCBO = 1500 V
: VCE (sat) = 3 V (max)
: tf(2) = 0.1 µs (typ.)
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorBase Voltage
CollectorEmitter Voltage
EmitterBase Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
1500
700
5
14
28
7
55
150
55~150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-22
Free Datasheet http://www.datasheet4u.com/





 C5856
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Breakdown Voltage
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Storage Time
Switching Time
Fall Time
Storage Time
Fall Time
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
VBE (sat)
fT
Cob
tstg(1)
tf(1)
tstg(2)
tf(2)
VCB = 1500 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 2 A
VCE = 5 V, IC = 7.5 A
VCE = 5 V, IC = 11 A
IC = 11 A, IB = 2.75 A
IC = 11 A, IB = 2.75 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 7.5 A , IB1 (end) = 1.0 A
fH = 32 kHz
ICP = 6.5 A, IB1 (end) = 0.9 A
fH = 100 kHz
2SC5856
Min Typ. Max UNIT
――
1 mA
― ― 100 µA
700
V
20 50
6.5 12.5
4.5 7.8
――
3
V
1.0 1.4
V
2 MHz
180
pF
3.5
0.25
µs
1.8
0.1
µs
2 2006-11-22
Free Datasheet http://www.datasheet4u.com/





 C5856
IC – VCE
20
4.0
16 2.5 3.0 3.5
2.0
12 1.5
8
0.4
4 IB = 0.2 A
0.6 0.8
1.0 1.2
Common emitter
Tc = 25
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
hFE – IC
100
Tc = 100°C
Common emitter
VCE = 5 V
25
25
10
1
0.01 0.1 1 10 100
Collector current IC (A)
20
Common emitter
VCE = 5 V
16
IC – VBE
12
Tc = 100°C
25
8
4 25
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Baseemitter voltage VBE (V)
3
2SC5856
2006-11-22
Free Datasheet http://www.datasheet4u.com/



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