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Power Transistor. BUX33 Datasheet

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Power Transistor. BUX33 Datasheet






BUX33 Transistor. Datasheet pdf. Equivalent




BUX33 Transistor. Datasheet pdf. Equivalent





Part

BUX33

Description

Silicon NPN Power Transistor

Manufacture

INCHANGE Semiconductor

Datasheet
Download BUX33 Datasheet


INCHANGE Semiconductor BUX33

BUX33; isc Silicon NPN Power Transistor BUX33 DESCRIPTION · Collector-Emitter Sus taining Voltage- : VCEO(SUS)= 400V(Min .) ·High Switching Speed ·Minimum L ot-to-Lot variations for robust device performance and reliable operation AP PLICATIONS ·Converters ·Inverters ·S witching regulators ·Motor controls A BSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB OL PARAMETER MAX VCEV C.


INCHANGE Semiconductor BUX33

ollector-Emitter Voltage VBE= 1.5V 800 VCER Collector-Emitter Voltage RBE= 1 0Ω 800 VCEX Collector-Emitter Volta ge VBE= -1.5V 450 VCEO Collector-Emi tter Voltage 400 UNIT V V V V VEBO Emitter-Base Voltage 8 V IC Collect or Current-Continuous 12 A ICM Coll ector Current-Peak 15 A IB Base Cur rent PC Collector Power Dissipation @ TC=25℃ Tj Junctio.


INCHANGE Semiconductor BUX33

n Temperature 4 A 150 W 200 ℃ T stg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Re sistance, Junction to Case 1.0 ℃/W i sc website:www.iscsemi.com 1 isc & i scsemi is registered trademark isc Sil icon NPN Power Transistor ELECTRICAL C HARACTERISTICS TC=25℃ unless otherwis e specified SYMBOL PARAMET.



Part

BUX33

Description

Silicon NPN Power Transistor

Manufacture

INCHANGE Semiconductor

Datasheet
Download BUX33 Datasheet




 BUX33
isc Silicon NPN Power Transistor
BUX33
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min.)
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor controls
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MAX
VCEV
Collector-Emitter Voltage
VBE= 1.5V
800
VCER
Collector-Emitter Voltage
RBE= 10Ω
800
VCEX
Collector-Emitter Voltage
VBE= -1.5V
450
VCEO
Collector-Emitter Voltage
400
UNIT
V
V
V
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
15
A
IB
Base Current
PC
Collector Power Dissipation
@TC=25
Tj
Junction Temperature
4
A
150
W
200
Tstg
Storage Temperature Range
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.0 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark





 BUX33
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 3A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 8A; IB= 2A
VCB=800V; IE= 0
VCB=800V; IE= 0;TC= 100
VEB= 8V; IC= 0
hFE
DC Current Gain
IC= 8A; VCE= 3V
BUX33
MIN TYP MAX UNIT
400
V
1.0
V
4.0
V
1.3
V
0.1
1.0
mA
2.0 mA
6
40
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark








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