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POWER TRANSISTORS. BUX33 Datasheet

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POWER TRANSISTORS. BUX33 Datasheet






BUX33 TRANSISTORS. Datasheet pdf. Equivalent




BUX33 TRANSISTORS. Datasheet pdf. Equivalent





Part

BUX33

Description

HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS



Feature


BUX33A BUX33A BUX33B MECHANICAL DATA Di mensions in mm(inches) 4 0 .0 1 (1 .5 7 5 ) M a x . HIGH VOLTAGE HIGH SPEED H IGH POWER TRANSISTORS 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 ) 6 .3 5 (0 .2 5 0 ) 1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 ) D ia . 3 0 .4 0 (1 .1 9 7 ) 2 9 .9 0 ( 1 .1 7 7 ) 1 2 .1 .
Manufacture

Semelab

Datasheet
Download BUX33 Datasheet


Semelab BUX33

BUX33; 9 (0 .4 8 ) 1 .6 3 (0 .0 6 4 ) 1 1 .1 8 (0 .4 4 ) 1 .5 2 (0 .0 6 0 ) DESCRIPTI ON The BUX33 series of silcon NPN power transistors in modified Jedec TO-3 met al case, feature high voltage capabilit y, fast switching speeds and low satura tion voltages. 4 .0 9 (0 .1 6 1 ) 3 .8 4 (0 .1 5 1 ) 2 P ls 1 1 .1 8 (0 .4 4 0 ) 1 0 .6 7 (0 .4 2 0 )  1 6 .9 7 ( 0 .6 6 8 ) 1 6 .8 .


Semelab BUX33

7 (0 .6 6 4 ) TO–3 PACKAGE (TO-204AA) PIN 1 — Base PIN 2 — Emitter Case is Collector. ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise stated) V CEV VCER VCEX VCEO VEBO IC ICM IB Ptot Tstg, TJ Collector – Emitter Voltage (VBE = 1.5V) Collector – Emitter Volt age (RBE = 10Ω) Collector – Emitter Voltage (VBE = -1.5V) Collector – Em itter Voltage (IC = 0) Emitter– Bas.


Semelab BUX33

e Voltage Collector Current Maximum Coll ector Current Base Current Total Power Dissipation at Tcase ≤ 25°C Maximum Storage and Junction Temperature BUX33 800V 800V 450V 400V BUX33A BUX33B 900 V 900V 500V 450V 8V 12A 15A 4 150W –6 5 to 200°C 1000V 1000V 550V 500V Seme lab Plc reserves the right to change te st conditions, parameter limits and pac kage dimensions without .

Part

BUX33

Description

HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS



Feature


BUX33A BUX33A BUX33B MECHANICAL DATA Di mensions in mm(inches) 4 0 .0 1 (1 .5 7 5 ) M a x . HIGH VOLTAGE HIGH SPEED H IGH POWER TRANSISTORS 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 ) 6 .3 5 (0 .2 5 0 ) 1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 ) D ia . 3 0 .4 0 (1 .1 9 7 ) 2 9 .9 0 ( 1 .1 7 7 ) 1 2 .1 .
Manufacture

Semelab

Datasheet
Download BUX33 Datasheet




 BUX33
BUX33A
BUX33A
BUX33B
MECHANICAL DATA
Dimensions in mm(inches)
4 0 .0 1 (1 .5 7 5 )
M ax.
2 2 .2 3 (0 .8 7 5 )
M ax.
1 .5 7 (0 .0 6 2 )
1 .4 7 (0 .0 5 8 )
D ia .
3 0 .4 0 (1 .1 9 7 )
2 9 .9 0 (1 .1 7 7 )
1 1 .1 8 (0 .4 4 0 )
1 0 .6 7 (0 .4 2 0 )

2 6 .6 7
(1 .0 5 0 )
M ax.
4 .4 7 (0 .1 7 6 )
R ad.
2 P ls .
1 1 .4 3 (0 .4 5 0 )
6 .3 5 (0 .2 5 0 )
1 2 .1 9 (0 .4 8 )
1 .6 3 (0 .0 6 4 ) 1 1 .1 8 (0 .4 4 )
1 .5 2 (0 .0 6 0 )
4 .0 9 (0 .1 6 1 )
3 .8 4 (0 .1 5 1 )
2 P ls
HIGH VOLTAGE
HIGH SPEED
HIGH POWER TRANSISTORS
DESCRIPTION
The BUX33 series of silcon NPN power
transistors in modified Jedec TO-3 metal
case, feature high voltage capability, fast
switching speeds and low saturation
voltages.
1 6 .9 7 (0 .6 6 8 )
1 6 .8 7 (0 .6 6 4 )
TO–3 PACKAGE (TO-204AA)
PIN 1 — Base PIN 2 — Emitter Case is Collector.
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise stated)
VCEV
Collector – Emitter Voltage (VBE = 1.5V)
VCER
Collector – Emitter Voltage (RBE = 10)
VCEX
Collector – Emitter Voltage (VBE = -1.5V)
VCEO
Collector – Emitter Voltage (IC = 0)
VEBO
Emitter– Base Voltage
IC Collector Current
ICM Maximum Collector Current
IB Base Current
Ptot Total Power Dissipation at Tcase 25°C
Tstg, TJ
Maximum Storage and Junction Temperature
BUX33 BUX33A BUX33B
800V 900V 1000V
800V 900V 1000V
450V 500V 550V
400V 450V 500V
8V
12A
15A
4
150W
–65 to 200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3697
Issue 1
Free Datasheet http://www.datasheet4u.com/




 BUX33
BUX33A
BUX33A
BUX33B
ELECTRICAL CHARACTERISTICS BUX33 (Tcase = 25°C unless otherwise stated)
Parameter
Collector - Emitter Sustaining
VCEO(sus)* Voltage
VBE(sat)
ICEX
Emitter – BaseVoltage
Collector Cut-off Current
IEBO
VCE(sat)*
hFE*
fT
td
tr
ts
tf
Emitter Cut-off Current
Collector – Emitter
Saturation Voltage
DC Current Gain
Transition Frequency
Turn–On Delay Time
Rise Time
Storage Time
Fall Time
Test Conditions
IC = 200mA
IB = 0
IC = 8A
VCE = 800V
IC = 0
IC = 8A
IC = 12A
IC = 8A
IC = 0.2A
VCC = 240V
IC = 8A
VCC = 240V
IC = 8A
IB = 2A
VBE = –1.5V
TC = 100°C
VBE = -8V
IB = 2A
IB = 3A
VCE = 3V
VCE = 10V
tp = 20µs
IB1 =2A
tp = 20µs
IB2 =-2A
* Pulsed: pulse duration = 300ms, duty cycle 2%
Min.
400
6
15
Typ.
Max. Unit
V
1.3 V
0.1
1.0 mA
2
1
V
4
40 —
60 MHz
0.1
0.45
µs
3.0
0.4
THERMAL CHARACTERISTICS
RθJC Thermal Resistance Junction to Case
1.0 °C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3697
Issue 1
Free Datasheet http://www.datasheet4u.com/




 BUX33
BUX33A
BUX33A
BUX33B
ELECTRICAL CHARACTERISTICS BUX33A (Tcase = 25°C unless otherwise stated)
Parameter
Collector - Emitter Sustaining
VCEO(sus)* Voltage
VBE(sat)
ICEX
Emitter – BaseVoltage
Collector Cut-off Current
IEBO
VCE(sat)*
hFE*
fT
td
tr
ts
tf
Emitter Cut-off Current
Collector – Emitter
Saturation Voltage
DC Current Gain
Transition Frequency
Turn–On Delay Time
Rise Time
Storage Time
Fall Time
Test Conditions
IC = 200mA
IB = 0
IC = 8A
VCE = 900V
IC = 0
IC = 8A
IC = 12A
IC = 8A
IC = 0.2A
VCC = 240V
IC = 8A
VCC = 240V
IC = 8A
IB = 2A
VBE = –1.5V
TC = 100°C
VBE = -8V
IB = 2A
IB = 3A
VCE = 3V
VCE = 10V
tp = 20µs
IB1 =2A
tp = 20µs
IB2 =-2A
* Pulsed: pulse duration = 300ms, duty cycle 2%
Min.
450
6
15
Typ.
Max. Unit
V
1.3 V
0.1
1.0 mA
2
1
V
4
40 —
60 MHz
0.1
0.45
µs
3.0
0.4
THERMAL CHARACTERISTICS
RθJC Thermal Resistance Junction to Case
1.0 °C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3697
Issue 1
Free Datasheet http://www.datasheet4u.com/






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