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Power MOSFET. STK1820F Datasheet

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Power MOSFET. STK1820F Datasheet






STK1820F MOSFET. Datasheet pdf. Equivalent




STK1820F MOSFET. Datasheet pdf. Equivalent





Part

STK1820F

Description

Advanced Power MOSFET



Feature


` Semiconductor STK1820F Advanced Powe r MOSFET DC-DC CONVERTER APPLICATION H IGH VOLTAGE SWITCHING APPLICATIONS Feat ures • • • • High Voltage: BVDS S=200V(Min.) Low Crss : Crss=22pF(Typ.) Low gate charge : Qg=30nC(Typ.) Low RD S(on) :RDS(on)=0.17Ω(Max.) Type NO. S TK1820F Marking STK1820 Package Code TO -220F-3L Ordering Information Outline Dimensions unit : mm 9.80.
Manufacture

AUK

Datasheet
Download STK1820F Datasheet


AUK STK1820F

STK1820F; ~10.20 Φ3.05~3.35 2.60~3.00 15.40~15. 80 12.20~12.60 9.10~9.30 1.07 Min. 0 .90 Max. 0.60 Max. 2.54 Typ. 2.54 Typ . 1 2 3 0.60 Max. 3.46 Typ. 4.70 Max. 2.70 Max. PIN Connections 1. Gat e 2. Drain 3. Source KSD-T0O011-000 1 Free Datasheet http://www.datasheet4u .com/ STK1820F Absolute maximum rating s Characteristic Drain-source voltage G ate-source voltage .


AUK STK1820F

Drain current (DC) Drain current (Pulsed ) * (Tc=25°C) Symbol VDSS VGSS ID (T c=25℃) (Tc=100℃) IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 20 0 ±30 18 8.6 72 30 18 396 18 13.9 150 -55~150 Unit V V A A A W A mJ A mJ °C Drain Power dissipation Avalanche cur rent (Single) Single pulsed avalanche e nergy Avalanche current (Repetitive) Re petitive avalanche energy Junctio.


AUK STK1820F

n temperature Storage temperature range * Limited by maximum junction temperatu re Characteristic Thermal resistance J unction-case Junction-ambient Symbol R th(J-C) Rth(J-a) Typ. - Max 4.16 62.5 Unit ℃/W KSD-T0O011-000 2 Free D atasheet http://www.datasheet4u.com/ S TK1820F Electrical Characteristics Char acteristic Drain-source breakdown volta ge Gate-threshold vo.

Part

STK1820F

Description

Advanced Power MOSFET



Feature


` Semiconductor STK1820F Advanced Powe r MOSFET DC-DC CONVERTER APPLICATION H IGH VOLTAGE SWITCHING APPLICATIONS Feat ures • • • • High Voltage: BVDS S=200V(Min.) Low Crss : Crss=22pF(Typ.) Low gate charge : Qg=30nC(Typ.) Low RD S(on) :RDS(on)=0.17Ω(Max.) Type NO. S TK1820F Marking STK1820 Package Code TO -220F-3L Ordering Information Outline Dimensions unit : mm 9.80.
Manufacture

AUK

Datasheet
Download STK1820F Datasheet




 STK1820F
`
Semiconductor
DC-DC CONVERTER APPLICATION
HIGH VOLTAGE SWITCHING APPLICATIONS
Features
High Voltage: BVDSS=200V(Min.)
Low Crss : Crss=22pF(Typ.)
Low gate charge : Qg=30nC(Typ.)
Low RDS(on) :RDS(on)=0.17(Max.)
Ordering Information
Type NO.
Marking
STK1820F
STK1820
Outline Dimensions
STK1820F
Advanced Power MOSFET
Package Code
TO-220F-3L
unit : mm
9.80~10.20
Φ3.05~3.35
2.60~3.00
1.07 Min.
0.90 Max.
2.54 Typ.
2.54 Typ.
123
KSD-T0O011-000
0.60 Max.
PIN Connections
1. Gate
2. Drain
3. Source
1
Free Datasheet http://www.datasheet4u.com/




 STK1820F
STK1820F
Absolute maximum ratings
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (Pulsed) *
Drain Power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
Symbol
VDSS
VGSS
(Tc=25)
ID (Tc=100)
IDP
PD
IAS
EAS
IAR
EAR
TJ
Tstg
Rating
200
±30
18
8.6
72
30
18
396
18
13.9
150
-55~150
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
Rth(J-C)
Rth(J-a)
Typ.
-
-
Max
4.16
62.5
(Tc=25°C)
Unit
V
V
A
A
A
W
A
mJ
A
mJ
°C
Unit
/W
KSD-T0O011-000
2
Free Datasheet http://www.datasheet4u.com/




 STK1820F
STK1820F
Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate-threshold voltage
Drain-source leakage current
Gate-source leakage
Drain-Source on-resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Ciss
Coss
ID=250µA, VGS=0
ID=250µA, VDS= VGS
VDS=200V, VGS=0V
VDS=0V, VGS=±30V
VGS=10V, ID=9A
VDS=40V, ID=9A
VGS=0V, VDS=25V, f=1MHz
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=100V, ID=18A
RG=25
VDD=100V, VGS=10V
ID=18A
Min.
200
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
0.14
8.5
840
150
22
24
29
68
29
30
4.8
11.5
(Tc=25°C)
Max. Unit
-V
4.0 V
10 µA
±100 nA
0.17
-S
1260
225 pF
33
36
43
ns
102
43
45
7.2 nC
17.3
Source-Drain Diode Ratings and Characteristics
Characteristic
Symbol
Test Condition
Continuous source current
Source current (Pulsed)
IS Integral reverse diode
ISP in the MOSFET
Forward voltage
VSD VGS=0V, IS=18A
Reverse recovery time
Reverse recovery charge
trr Is=18A, VGS=0V
Qrr dis/dt=100A/us
Note ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=2.0mH, IAS=18A, VDD=50V, RG=25
Pulse Test : Pulse Width300us, Duty cycle2%
Essentially independent of operating temperature
Min
-
-
-
-
-
Typ
-
-
-
253
2.63
(Tc=25°C)
Max Unit
18
A
72
1.4 V
- ns
- uC
KSD-T0O011-000
3
Free Datasheet http://www.datasheet4u.com/






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