N-Channel Logic Level MOSFET
Freescale
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to...
Description
Freescale
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
Si 34 24 DV/ MC34 24 DV
N-Channel Logic Level MOSFET
PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.027 @ VGS = 10 V 30 0.035 @ VGS = 4.5V ID (A) 6.3 5.5
1
6 5 4
Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TSOP-6 saves board space Fast switching speed High performance trench technology
2 3
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units VDS Drain-Source Voltage 30 V ±20 Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current
b a a
o
TA=25 C TA=70 C
o
o
ID IDM IS
6.3 5.2 ±20 1.3 1.6 1.0 A W
o
A
Continuous Source Current (Diode Conduction) Power Dissipation
a
TA=25 C TA=70 C
o
o
PD
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
C
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Ambient
a
Symbol
RT HJA
Maximum Units
78.0
o
t <= 5 sec
C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
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1
Free Datasheet http://www.datasheet4u.com/
Freescale
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Par...
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