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Level MOSFET. SI3424DV Datasheet

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Level MOSFET. SI3424DV Datasheet






SI3424DV MOSFET. Datasheet pdf. Equivalent




SI3424DV MOSFET. Datasheet pdf. Equivalent





Part

SI3424DV

Description

N-Channel Logic Level MOSFET



Feature


Freescale These miniature surface mount MOSFETs utilize a high cell density tre nch process to provide low rDS(on) and to ensure minimal power loss and heat d issipation. Typical applications are DC -DC converters and power management in portable and battery-powered products s uch as computers, printers, PCMCIA card s, cellular and cordless telephones. S i 34 24 DV/ MC34 2.
Manufacture

Freescale

Datasheet
Download SI3424DV Datasheet


Freescale SI3424DV

SI3424DV; 4 DV N-Channel Logic Level MOSFET PRODUC T SUMMARY VDS (V) rDS(on) (Ω) 0.027 @ VGS = 10 V 30 0.035 @ VGS = 4.5V ID (A ) 6.3 5.5 1 6 5 4 • • • • L ow rDS(on) provides higher efficiency a nd extends battery life Low thermal imp edance copper leadframe TSOP-6 saves bo ard space Fast switching speed High per formance trench technology 2 3 ABSOLU TE MAXIMUM RATINGS (TA = 25 .


Freescale SI3424DV

C UNLESS OTHERWISE NOTED) Parameter Symb ol Maximum Units VDS Drain-Source Volta ge 30 V ±20 Gate-Source Voltage VGS Co ntinuous Drain Current Pulsed Drain Cur rent b a a o TA=25 C TA=70 C o o ID IDM IS 6.3 5.2 ±20 1.3 1.6 1.0 A W o A Continuous Source Current (Diode C onduction) Power Dissipation a TA=25 C TA=70 C o o PD Operating Junction a nd Storage Temperatu.


Freescale SI3424DV

re Range TJ, Tstg -55 to 150 C THERMA L RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol RT HJA M aximum Units 78.0 o t <= 5 sec C/W N otes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by ma ximum junction temperature www.freescal e.net.cn 1 Free Datasheet http://www. datasheet4u.com/ Freescale SPECIFICATI ONS (TA = 25 C UNLESS .

Part

SI3424DV

Description

N-Channel Logic Level MOSFET



Feature


Freescale These miniature surface mount MOSFETs utilize a high cell density tre nch process to provide low rDS(on) and to ensure minimal power loss and heat d issipation. Typical applications are DC -DC converters and power management in portable and battery-powered products s uch as computers, printers, PCMCIA card s, cellular and cordless telephones. S i 34 24 DV/ MC34 2.
Manufacture

Freescale

Datasheet
Download SI3424DV Datasheet




 SI3424DV
Freescale
Si 34 24 DV/ MC34 24 DV
N-Channel Logic Level MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) ()
30 0.027 @ VGS = 10 V
0.035 @ VGS = 4.5V
ID (A)
6.3
5.5
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
TSOP-6 saves board space
• Fast switching speed
• High performance trench technology
16
25
34
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
VDS
VGS
TA=25oC
TA=70oC
ID
30
±20
6.3
5.2
IDM ±20
IS
TA=25oC
TA=70oC
PD
1.3
1.6
1.0
TJ, Tstg -55 to 150
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 5 sec
Symbol Maximum Units
RT HJA
78.0
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
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 SI3424DV
Freescale
Si 34 24 DV/ MC34 24 DV
SPECIFICATIONS (TA = 25oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Switch Off Characteristics
Gate-Body Leakage
Zero Gate Voltage Drain Current
Switch On Characteristics
Gate-Threshold Voltage
Drain-Source On-ResistanceA
Forward TranconductanceA
On-State Drain CurrentA
Diode Forward Voltage
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
IGSS VDS = 0 V, VGS = ±20 V
IDSS
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55oC
VGS(th)
rDS(on)
gfs
ID(on)
VSD
VDS = VGS, ID = 250 uA
VGS = 10 V, ID = 6.3 A
VGS = 10 V, ID = 6.3 A TJ = 55oC
VGS = 4.5 V, ID = 5.5 A
VDS = 10 V, ID = 6.3 A
VDS = 5 V, VGS = 10 V
IS = 1.3 A, VGS = 0 V
Qg
Qgs
VDS = 15 V, VGS = 5 V, ID = 6.3 A
RL = 6
Qgd
td(on)
tr
td(off)
tf
VDS = 15 V, RL = 6 , ID = 1 A,
VGEN = 10 V
Limits
Unit
Min Typ Max
±100 nA
1 uA
10
1.0 3.0 V
27
39 m
35
45 S
20 A
0.75 V
9
2.9 nC
3.2
6
10
ns
18
5
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.
FREESCALE reserves the right to make changes without further notic e to any products herein. freescale makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does freescale assume any liability arising ou t of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in freescale data sheet s and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the freescale product could create a situation where personal injury or death may occur.
Should Buyer purchase or use freescale products for any such uninte nded or unauthorized application, Buyer shall indemnify and hold freescale and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that freescale was negligent regarding the design or m anufacture of the part. freescale is an Equal Opportunity/Affirmative Action Employer.
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 SI3424DV
Freescale
Si 34 24 DV/ MC34 24 DV
Typical Electrical Characteristics (N-Channel)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with
Gate to Source Voltage
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature
3 www.freescale.net.cn
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