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FDA28N50F. 28N50F Datasheet

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FDA28N50F. 28N50F Datasheet






28N50F FDA28N50F. Datasheet pdf. Equivalent




28N50F FDA28N50F. Datasheet pdf. Equivalent





Part

28N50F

Description

FDA28N50F



Feature


FDA28N50F N-Channel MOSFET January 2012 FDA28N50F N-Channel MOSFET 500V, 28A, 0.175Ω Features • RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 14A • Low G ate Charge ( Typ. 80nC) • Low Crss ( Typ. 38pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Cap ability • RoHS Compliant UniFET TM Description These N-Channel enhancement mode power field effect transisto.
Manufacture

Fairchild Semiconductor

Datasheet
Download 28N50F Datasheet


Fairchild Semiconductor 28N50F

28N50F; rs are produced using Fairchild’s prop rietary, planar stripe, DMOS technology . This advance technology has been espe cially tailored to minimize on-state re sistance, provide superior switching pe rformance, and withstand high energy pu lse in the avalanche and commutation mo de. These device are well suited for hi gh efficient switched mode power suppli es and active power .


Fairchild Semiconductor 28N50F

factor correction. D G G DS TO-3PN S MOSFET Maximum Ratings TC = 25oC unles s otherwise noted Symbol VDSS VGSS ID I DM EAS IAR EAR dv/dt PD TJ, TSTG TL Par ameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Curr ent Single Pulsed Avalanche Energy Aval anche Current Repetitive Avalanche Ener gy Peak Diode Recovery dv/dt Power Diss ipation - Derate a.


Fairchild Semiconductor 28N50F

bove 25oC (TC = 25oC) -Continuous (TC = 25oC) - Pulsed -Continuous (TC = 100oC) (Note 1) (Note 2) (Note 1) (Note 1) (N ote 3) Ratings 500 ±30 28 17 112 2352 28 31 20 310 2.5 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC o o Operat ing and Storage Temperature Range Maxim um Lead Temperature for Soldering Purpo se, 1/8” from Case for 5 Seconds C C Thermal Characteris.

Part

28N50F

Description

FDA28N50F



Feature


FDA28N50F N-Channel MOSFET January 2012 FDA28N50F N-Channel MOSFET 500V, 28A, 0.175Ω Features • RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 14A • Low G ate Charge ( Typ. 80nC) • Low Crss ( Typ. 38pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Cap ability • RoHS Compliant UniFET TM Description These N-Channel enhancement mode power field effect transisto.
Manufacture

Fairchild Semiconductor

Datasheet
Download 28N50F Datasheet




 28N50F
FDA28N50F
N-Channel MOSFET
500V, 28A, 0.175Ω
Features
• RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 14A
• Low Gate Charge ( Typ. 80nC)
• Low Crss ( Typ. 38pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
January 2012
UniFETTM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These device are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
GDS
TO-3PN
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
G
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
Ratings
500
±30
28
17
112
2352
28
31
20
310
2.5
-55 to +150
300
Ratings
0.4
0.24
40
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2012 Fairchild Semiconductor Corporation
FDA28N50F Rev.C0
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/




 28N50F
Package Marking and Ordering Information
Device Marking
FDA28N50F
Device
FDA28N50F
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250μA, VGS = 0V, TJ = 25oC
ID = 250μA, Referenced to 25oC
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125oC
VGS = ±30V, VDS = 0V
500
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250μA
VGS = 10V, ID = 14A
VDS = 20V, ID = 14A
(Note 4)
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 28A
VGS = 10V
(Note 4, 5)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 28A
RG = 25Ω
(Note 4, 5)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 28A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 28A
dIF/dt = 100A/μs
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6mH, IAS = 28A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD 28A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300μs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
(Note 4)
-
-
-
-
-
Typ. Max. Units
- -V
0.7 - V/oC
-
-
1
10
μA
- ±100 nA
-
0.140
35
5.0
0.175
-
V
Ω
S
3975
566
38
80
22
31
5387
753
56
105
-
-
pF
pF
pF
nC
nC
nC
67 145 ns
137 285 ns
192 395 ns
101 212 ns
- 28 A
- 112 A
- 1.5 V
266 - ns
1.38 - μC
FDA28N50F Rev.C0
2 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/




 28N50F
Typical Performance Characteristics
Figure 1. On-Region Characteristics
100 VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
10 5.5 V
1
0.3
0.06 0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
VDS,Drain-Source Voltage[V]
10 20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.30
0.25
0.20
0.15
VGS = 10V
VGS = 20V
0.10
0
*Note: TJ = 25oC
25 50 75
ID, Drain Current [A]
100
Figure 5. Capacitance Characteristics
8000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
6000
*Note:
1. VGS = 0V
Ciss 2. f = 1MHz
4000
Coss
2000
0
0.1
Crss
1 10
VDS, Drain-Source Voltage [V]
30
Figure 2. Transfer Characteristics
150
100
150oC
10
-55oC
25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
1
45678
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
150
100
150oC
10 25oC
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
1
0.2 0.6 1.0 1.4
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 250V
8 VDS = 400V
6
4
2
*Note: ID = 28A
0
0 20 40 60 80 100
Qg, Total Gate Charge [nC]
FDA28N50F Rev.C0
3 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/






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