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N-Channel MOSFET. FDA20N50F Datasheet

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N-Channel MOSFET. FDA20N50F Datasheet






FDA20N50F MOSFET. Datasheet pdf. Equivalent




FDA20N50F MOSFET. Datasheet pdf. Equivalent





Part

FDA20N50F

Description

N-Channel MOSFET



Feature


FDA20N50F N-Channel UniFETTM FRFET® MOS FET March 2013 FDA20N50F N-Channel Un iFETTM FRFET® MOSFET 500 V, 22 A, 2 60 m Features • RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 11 A • Lo w Gate Charge (Typ. 50 nC) • Low Crss (Typ. 27 pF) • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • PDP TV • Uninterruptible Power Supply Description .
Manufacture

Fairchild Semiconductor

Datasheet
Download FDA20N50F Datasheet


Fairchild Semiconductor FDA20N50F

FDA20N50F; UniFETTM MOSFET is Fairchild Semiconduct or®’s high voltage MOSFET family bas ed on planar stripe and DMOS technology . This MOSFET is tailored to reduce on- state resistance, and to provide better switching performance and higher avala nche energy strength. The body diode’ s reverse recovery performance of UniFE T FRFET®MOSFET has been enhanced by li fetime control. Its trr .


Fairchild Semiconductor FDA20N50F

is less than 100nsec and the reverse dv/ dt immunity is 15V/ns while normal plan ar MOSFETs have over 200nsec and 4.5V/n sec respectively. Therefore, it can rem ove additional component and improve sy stem reliability in certain applic .


Fairchild Semiconductor FDA20N50F

.

Part

FDA20N50F

Description

N-Channel MOSFET



Feature


FDA20N50F N-Channel UniFETTM FRFET® MOS FET March 2013 FDA20N50F N-Channel Un iFETTM FRFET® MOSFET 500 V, 22 A, 2 60 m Features • RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 11 A • Lo w Gate Charge (Typ. 50 nC) • Low Crss (Typ. 27 pF) • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • PDP TV • Uninterruptible Power Supply Description .
Manufacture

Fairchild Semiconductor

Datasheet
Download FDA20N50F Datasheet




 FDA20N50F
March 2013
FDA20N50F
N-Channel UniFETTM FRFET® MOSFET
500 V, 22 A, 260 m
Features
• RDS(on) = 220 m(Typ.) @ VGS = 10 V, ID = 11 A
• Low Gate Charge (Typ. 50 nC)
• Low Crss (Typ. 27 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Applications
• PDP TV
• Uninterruptible Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. The body diode’s reverse recovery performance
of UniFET FRFET®MOSFET has been enhanced by lifetime
control. Its trr is less than 100nsec and the reverse dv/dt immu-
nity is 15V/ns while normal planar MOSFETs have over 200nsec
and 4.5V/nsec respectively. Therefore, it can remove additional
component and improve system reliability in certain applications
in which the performance of MOSFET’s body diode is significant.
This device family is suitable for switching power converter appli-
cations such as power factor correction (PFC), flat panel display
(FPD) TV power, ATX and electronic lamp ballasts.
• AC-DC Power Supply
D
G
D
S
TO-3PN
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
©2012 Fairchild Semiconductor Corporation
FDA20N50F Rev.C0
1
FDA20N50F
500
±30
22
13
88
1110
22
39
20
388
3.1
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Max.
0.44
40
Unit
oC/W
www.fairchildsemi.com




 FDA20N50F
Package Marking and Ordering Information
Device Marking
FDA20N50F
Device
FDA20N50F
Package
TO-3PN
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TJ = 25oC
ID = 250A, Referenced to 25oC
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125oC
VGS = ±30V, VDS = 0V
500
-
-
-
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250A
VGS = 10V, ID = 11A
VDS = 40V, ID = 11A
3.0
-
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 20A
VGS = 10V
(Note 4)
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 20A
RG = 25
(Note 4)
-
-
-
-
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 22A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, ISD = 20A
dIF/dt = 100A/s
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 5mH, IAS = 20A, VDD = 50V, RG = 25, Starting TJ = 25°C
3: ISD 22A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25°C
4: Essentially Independent of Operating Temperature Typical Characteristics
-
-
-
-
-
Typ.
-
0.6
-
-
-
-
0.22
24
2550
350
27
50
14
20
45
120
100
60
-
-
-
154
0.5
Max. Unit
-
-
10
100
±100
V
V/oC
A
nA
5.0 V
0.26
-S
3390
465
40
65
-
-
pF
pF
pF
nC
nC
nC
100 ns
250 ns
210 ns
130 ns
22 A
88 A
1.5 V
- ns
- C
©2012 Fairchild Semiconductor Corporation
FDA20N50F Rev.C0
2
www.fairchildsemi.com




 FDA20N50F
Typical Performance Characteristics
Figure 1. On-Region Characteristics
80 VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
10 5.5 V
1
0.5
0.1
*Notes:
1. 250s Pulse Test
2. TC = 25oC
1
VDS,Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
VGS = 10V
VGS = 20V
*Note: TJ = 25oC
25 50
ID, Drain Current [A]
75
Figure 5. Capacitance Characteristics
6000
4500
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
3000
Ciss
1500
0
0.1
Crss
1 10
VDS, Drain-Source Voltage [V]
©2012 Fairchild Semiconductor Corporation
FDA20N50F Rev.C0
50
Figure 2. Transfer Characteristics
100
10 150oC
25oC
*Notes:
1. VDS = 20V
2. 250s Pulse Test
1
468
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
10 150oC
25oC
1
0.2
0.0
*Notes:
1. VGS = 0V
2. 250s Pulse Test
0.5 1.0
VSD, Body Diode Forward Voltage [V]
1.5
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 250V
8 VDS = 400V
6
4
2
0 *Note: ID = 20A
0 10 20 30 40 50 60
Qg, Total Gate Charge [nC]
3 www.fairchildsemi.com






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